IRHMJ7250 Specs and Replacement

Type Designator: IRHMJ7250

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 140 nS

Cossⓘ - Output Capacitance: 850 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO254AA

IRHMJ7250 substitution

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IRHMJ7250 datasheet

 ..1. Size:330K  international rectifier
 irhmj7250.pdf pdf_icon

IRHMJ7250

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 9.1. Size:160K  international rectifier
 irhmj57160.pdf pdf_icon

IRHMJ7250

PD-96916 RADIATION HARDENED IRHMJ57160 POWER MOSFET 100V, N-CHANNEL SURFACE MOUNT (TO-254AA Tabless) TECHNOLOGY 5 5 Product Summary Part Number Radiation Level RDS(on) ID IRHMJ57160 100K Rads (Si) 0.018 35A* IRHMJ53160 300K Rads (Si) 0.018 35A* IRHMJ54160 600K Rads (Si) 0.018 35A* IRHMJ58160 1000K Rads (Si) 0.019 35A* TO-254AA Tabless International Recti... See More ⇒

 9.2. Size:168K  international rectifier
 irhmj57260se.pdf pdf_icon

IRHMJ7250

PD-96913 RADIATION HARDENED IRHMJ57260SE POWER MOSFET 200V, N-CHANNEL SURFACE MOUNT (TO-254AA Tabless) TECHNOLOGY 5 5 Product Summary Part Number Radiation Level RDS(on) ID IRHMJ57260SE 100K Rads (Si) 0.049 35A* TO-254AA Tabless International Rectifier s R5TM technology provides Features high performance power MOSFETs for space n Single Event Effect (SEE) Hardene... See More ⇒

Detailed specifications: IRHM9230, IRHM9250, IRHM9260, IRHMB57064, IRHMB57260SE, IRHMB57Z60, IRHMJ57160, IRHMJ57260SE, STF13NM60N, IRHMK57160, IRHMK57260SE, IRHMK597160, IRHMS57064, IRHMS57160, IRHMS57163SE, IRHMS57260SE, IRHMS57264SE

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.