IRHMS597Z60 Specs and Replacement
Type Designator: IRHMS597Z60
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO254AA
IRHMS597Z60 substitution
- MOSFET ⓘ Cross-Reference Search
IRHMS597Z60 datasheet
irhms597064 irhms597z60.pdf
The documentation and process conversion INCH-POUND measures necessary to comply with this revision shall be completed by 18 June 2014. MIL-PRF-19500/733C 18 April 2014 SUPERSEDING MIL-PRF-19500/733B 10 September 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2N75... See More ⇒
irhms597160.pdf
PD - 94283 RADIATION HARDENED IRHMS597160 POWER MOSFET 100V, P-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHMS597160 100K Rads (Si) 0.049 -45A* IRHMS593160 300K Rads (Si) 0.049 -45A* Low-Ohmic TO-254AA International Rectifier s R5TM technology provides Features high performance power MOSFETs f... See More ⇒
irhms597160 irhms597260.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/713C completed by 18 February 2014. 18 December 2013 SUPERSEDING MIL-PRF-19500/713B 9 November 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, ... See More ⇒
irhms57064 irhms57160.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/698F shall be completed by 13 June 2015. 13 March 2015 SUPERSEDING MIL-PRF-19500/698E 20 May 2013 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, DEVICE TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR, ... See More ⇒
Detailed specifications: IRHMS57160, IRHMS57163SE, IRHMS57260SE, IRHMS57264SE, IRHMS57Z60, IRHMS597064, IRHMS597160, IRHMS597260, IRF830, IRHMS67160, IRHMS67164, IRHMS67260, IRHMS67264, IRH7054, IRH7130, IRH7150, IRH7230
Keywords - IRHMS597Z60 MOSFET specs
IRHMS597Z60 cross reference
IRHMS597Z60 equivalent finder
IRHMS597Z60 pdf lookup
IRHMS597Z60 substitution
IRHMS597Z60 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1
Popular searches
irfb3306 equivalent | irfp460 характеристики | k2837 datasheet | k389 transistor | mje15032g equivalent | nsd134 | 60r190p datasheet | cs30n20 datasheet
