IRHMS597Z60. Аналоги и основные параметры
Наименование производителя: IRHMS597Z60
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 208 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 45 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
Тип корпуса: TO254AA
Аналог (замена) для IRHMS597Z60
- подборⓘ MOSFET транзистора по параметрам
IRHMS597Z60 даташит
irhms597064 irhms597z60.pdf
The documentation and process conversion INCH-POUND measures necessary to comply with this revision shall be completed by 18 June 2014. MIL-PRF-19500/733C 18 April 2014 SUPERSEDING MIL-PRF-19500/733B 10 September 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2N75
irhms597160.pdf
PD - 94283 RADIATION HARDENED IRHMS597160 POWER MOSFET 100V, P-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHMS597160 100K Rads (Si) 0.049 -45A* IRHMS593160 300K Rads (Si) 0.049 -45A* Low-Ohmic TO-254AA International Rectifier s R5TM technology provides Features high performance power MOSFETs f
irhms597160 irhms597260.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/713C completed by 18 February 2014. 18 December 2013 SUPERSEDING MIL-PRF-19500/713B 9 November 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2,
irhms57064 irhms57160.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/698F shall be completed by 13 June 2015. 13 March 2015 SUPERSEDING MIL-PRF-19500/698E 20 May 2013 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, DEVICE TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR,
Другие IGBT... IRHMS57160, IRHMS57163SE, IRHMS57260SE, IRHMS57264SE, IRHMS57Z60, IRHMS597064, IRHMS597160, IRHMS597260, IRF830, IRHMS67160, IRHMS67164, IRHMS67260, IRHMS67264, IRH7054, IRH7130, IRH7150, IRH7230
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Список транзисторов
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