All MOSFET. IRFP140N Datasheet

 

IRFP140N MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFP140N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 140 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 33 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 94(max) nC
   Rise Time (tr): 39 nS
   Drain-Source Capacitance (Cd): 330 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.052 Ohm
   Package: TO247AC

 IRFP140N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP140N Datasheet (PDF)

 ..1. Size:158K  international rectifier
irfp140n.pdf

IRFP140N IRFP140N

PD - 91343BIRFP140NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.052 Fully Avalanche RatedGID = 33ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. Thi

 ..2. Size:348K  infineon
irfp140npbf.pdf

IRFP140N IRFP140N

PD- 95711IRFP140NPbF Lead-Freewww.irf.com 18/2/04IRFP140NPbF2 www.irf.comIRFP140NPbFwww.irf.com 3IRFP140NPbF4 www.irf.comIRFP140NPbFwww.irf.com 5IRFP140NPbF6 www.irf.comIRFP140NPbFwww.irf.com 7IRFP140NPbFTO-247AC Package Outline Dimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: T HIS IS AN IRFPE30 WITH ASSEM

 ..3. Size:2133K  cn vbsemi
irfp140n.pdf

IRFP140N IRFP140N

IRFP140Nwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.035 at VGS = 10 V10050aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersDTO-247ACGSDGSN-Channel MOSFETABSOLUTE MAXIMUM RAT

 ..4. Size:241K  inchange semiconductor
irfp140n.pdf

IRFP140N IRFP140N

isc N-Channel MOSFET Transistor IRFP140NIIRFP140NFEATURESStatic drain-source on-resistance:RDS(on)52mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

 7.1. Size:264K  international rectifier
irfp1405pbf.pdf

IRFP140N IRFP140N

PD - 95509AIRFP1405PbFHEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 5.3m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 95ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance per si

 7.2. Size:223K  international rectifier
auirfp1405.pdf

IRFP140N IRFP140N

PD - 97724AUTOMOTIVE GRADEAUIRFP1405FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS55Vl Dynamic dV/dT RatingRDS(on) typ.4.2ml 175C Operating Temperaturel Fast Switchingmax 5.3mGl Fully Avalanche RatedID (Silicon Limited)160Al Repetitive Avalanche AllowedSID (Package Limited)95Aup to Tjmaxl Lead-Free, R

 7.3. Size:169K  international rectifier
irfp140.pdf

IRFP140N IRFP140N

 7.4. Size:492K  international rectifier
irfp140 irfp141 irfp142 irfp143.pdf

IRFP140N IRFP140N

 7.5. Size:1220K  international rectifier
irfp140pbf.pdf

IRFP140N IRFP140N

PD- 95424IRFP140PbF Lead-Freewww.irf.com 106/17/04IRFP140PbF2 www.irf.comIRFP140PbFwww.irf.com 3IRFP140PbF4 www.irf.comIRFP140PbFwww.irf.com 5IRFP140PbF6 www.irf.comIRFP140PbFwww.irf.com 7IRFP140PbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY PA

 7.6. Size:284K  samsung
irfp140a.pdf

IRFP140N IRFP140N

 7.7. Size:1752K  vishay
irfp140 sihfp140.pdf

IRFP140N IRFP140N

IRFP140, SiHFP140Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.077RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 72 COMPLIANT 175 C Operating TemperatureQgs (nC) 11 Fast SwitchingQgd (nC) 32 Ease of ParallelingConfiguration Single Sim

 7.8. Size:264K  infineon
irfp1405pbf.pdf

IRFP140N IRFP140N

PD - 95509AIRFP1405PbFHEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 5.3m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 95ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance per si

 7.9. Size:241K  inchange semiconductor
irfp1405.pdf

IRFP140N IRFP140N

isc N-Channel MOSFET Transistor IRFP1405IIRFP1405FEATURESStatic drain-source on-resistance:RDS(on)5.3mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sour

 7.10. Size:400K  inchange semiconductor
irfp140.pdf

IRFP140N IRFP140N

iscN-Channel MOSFET Transistor IRFP140FEATURESLow drain-source on-resistance:RDS(ON) 77m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Datasheet: IRFP064 , IRFP064N , IRFP130 , IRFP131 , IRFP132 , IRFP133 , IRFP140 , IRFP140A , 5N50 , IRFP141 , IRFP142 , IRFP143 , APT50M38JFLL , IRFP150 , IRFP150A , IRFP150FI , IRFP150N .

 

 
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