IRFP140N - описание и поиск аналогов

 ..1. Size:348K  international rectifier
 irfp140npbf.pdf 

PD- 95711 IRFP140NPbF Lead-Free www.irf.com 1 8/2/04 IRFP140NPbF 2 www.irf.com IRFP140NPbF www.irf.com 3 IRFP140NPbF 4 www.irf.com IRFP140NPbF www.irf.com 5 IRFP140NPbF 6 www.irf.com IRFP140NPbF www.irf.com 7 IRFP140NPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE T HIS IS AN IRFPE30 WITH ASSEM

 ..2. Size:158K  international rectifier
 irfp140n.pdf 

PD - 91343B IRFP140N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175 C Operating Temperature Fast Switching RDS(on) = 0.052 Fully Avalanche Rated G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. Thi

 ..3. Size:2133K  cn vbsemi
 irfp140n.pdf 

IRFP140N www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.035 at VGS = 10 V 100 50a COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters D TO-247AC G S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RAT

 ..4. Size:241K  inchange semiconductor
 irfp140n.pdf 

isc N-Channel MOSFET Transistor IRFP140N IIRFP140N FEATURES Static drain-source on-resistance RDS(on) 52m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Fully Avalanche Rated ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

 7.1. Size:264K  international rectifier
 irfp1405pbf.pdf 

PD - 95509A IRFP1405PbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 5.3m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 95A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per si

 7.2. Size:223K  international rectifier
 auirfp1405.pdf 

PD - 97724 AUTOMOTIVE GRADE AUIRFP1405 Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS 55V l Dynamic dV/dT Rating RDS(on) typ. 4.2m l 175 C Operating Temperature l Fast Switching max 5.3m G l Fully Avalanche Rated ID (Silicon Limited) 160A l Repetitive Avalanche Allowed S ID (Package Limited) 95A up to Tjmax l Lead-Free, R

 7.3. Size:169K  international rectifier
 irfp140.pdf 

 7.4. Size:492K  international rectifier
 irfp140 irfp141 irfp142 irfp143.pdf 

 7.5. Size:1220K  international rectifier
 irfp140pbf.pdf 

PD- 95424 IRFP140PbF Lead-Free www.irf.com 1 06/17/04 IRFP140PbF 2 www.irf.com IRFP140PbF www.irf.com 3 IRFP140PbF 4 www.irf.com IRFP140PbF www.irf.com 5 IRFP140PbF 6 www.irf.com IRFP140PbF www.irf.com 7 IRFP140PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE THIS IS AN IRFPE30 WITH ASSEMBLY PA

 7.6. Size:284K  samsung
 irfp140a.pdf 

 7.7. Size:1752K  vishay
 irfp140 sihfp140.pdf 

IRFP140, SiHFP140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.077 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 72 COMPLIANT 175 C Operating Temperature Qgs (nC) 11 Fast Switching Qgd (nC) 32 Ease of Paralleling Configuration Single Sim

 7.8. Size:241K  inchange semiconductor
 irfp1405.pdf 

isc N-Channel MOSFET Transistor IRFP1405 IIRFP1405 FEATURES Static drain-source on-resistance RDS(on) 5.3m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sour

 7.9. Size:400K  inchange semiconductor
 irfp140.pdf 

iscN-Channel MOSFET Transistor IRFP140 FEATURES Low drain-source on-resistance RDS(ON) 77m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER