IRFIZ44NPBF MOSFET Datasheet: N-Ch, 55V, 31A. Full specification with pinout and replacement list

IRFIZ44NPBF Specs and Replacement

Type Designator: IRFIZ44NPBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 31 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 69 nS

Cossⓘ - Output Capacitance: 410 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: TO220F

IRFIZ44NPBF substitution

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IRFIZ44NPBF datasheet

..1. Size:265K international rectifier
irfiz44npbf.pdf pdf_icon

PD - 94836 IRFIZ44NPbF HEXFET Power MOSFET l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.024 l Fully Avalanche Rated G l Lead-Free ID = 31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely ... See More ⇒

..2. Size:502K infineon
irfiz44npbf.pdf pdf_icon

IRFIZ44NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 55V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.024 Fully Avalanche Rated Lead-Free ID 31A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low... See More ⇒

6.1. Size:106K international rectifier
irfiz44n.pdf pdf_icon

PD - 9.1403A IRFIZ44N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.024 Fully Avalanche Rated G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per ... See More ⇒

6.2. Size:214K international rectifier
auirfiz44n.pdf pdf_icon

AUTOMOTIVE GRADE PD - 97767 AUIRFIZ44N Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance V(BR)DSS 55V l Isolated Package l High Voltage Isolation = 2.5KVRMS RDS(on) max. 24m l Sink to Lead Creepage Distantce = 4.8mm l 175 C Operating Temperature ID 31A l Fully Avalanche Rated l Lead-Free, RoHS Compliant l Automotive Qualified* Description S... See More ⇒