IRFIZ44NPBF. Аналоги и основные параметры

Наименование производителя: IRFIZ44NPBF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 45 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 55 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 31 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 69 ns

Cossⓘ - Выходная емкость: 410 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.024 Ohm

Тип корпуса: TO220F

Аналог (замена) для IRFIZ44NPBF

- подборⓘ MOSFET транзистора по параметрам

 

IRFIZ44NPBF даташит

 ..1. Size:265K  international rectifier
 irfiz44npbf.pdf pdf_icon

IRFIZ44NPBF

PD - 94836 IRFIZ44NPbF HEXFET Power MOSFET l Advanced Process Technology D l Isolated Package VDSS = 55V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.024 l Fully Avalanche Rated G l Lead-Free ID = 31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely

 ..2. Size:502K  infineon
 irfiz44npbf.pdf pdf_icon

IRFIZ44NPBF

IRFIZ44NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 55V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.024 Fully Avalanche Rated Lead-Free ID 31A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

 6.1. Size:106K  international rectifier
 irfiz44n.pdf pdf_icon

IRFIZ44NPBF

PD - 9.1403A IRFIZ44N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 55V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.024 Fully Avalanche Rated G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per

 6.2. Size:214K  international rectifier
 auirfiz44n.pdf pdf_icon

IRFIZ44NPBF

AUTOMOTIVE GRADE PD - 97767 AUIRFIZ44N Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance V(BR)DSS 55V l Isolated Package l High Voltage Isolation = 2.5KVRMS RDS(on) max. 24m l Sink to Lead Creepage Distantce = 4.8mm l 175 C Operating Temperature ID 31A l Fully Avalanche Rated l Lead-Free, RoHS Compliant l Automotive Qualified* Description S

ПОКАЗАТЬ ЕЩЁ

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