IRFP150A MOSFET. Datasheet pdf. Equivalent

   Type Designator: IRFP150A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 193 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 43 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 75 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO3P

IRFP150A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS

IRFP150A Datasheet (PDF)

..1. Size:261K fairchild semi
irfp150a.pdf pdf_icon

IRFP150AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 43 A Improved Gate Charge Extended Safe Operating AreaTO-3P 175 C Operating TemperatureA (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.032 (Typ.) 1231.Gate 2. Drain 3. Source

..2. Size:957K samsung
irfp150a.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 43 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V 1 Lower RDS(ON) : 0.032 (Typ.)231.Gate 2. Drain 3. SourceAbsolute Maximum R

..3. Size:377K onsemi
irfp150a.pdf pdf_icon

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

..4. Size:233K inchange semiconductor
irfp150a.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP150AFEATURESDrain Current I = 43A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 0.04(Max)DS(on)Fast Switching100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode

7.1. Size:135K international rectifier
irfp150n.pdf pdf_icon

PD- 91503CIRFP150NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.036W Fully Avalanche RatedGID = 42ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefi

7.2. Size:167K international rectifier
irfp150.pdf pdf_icon

7.3. Size:1141K international rectifier
irfp150mpbf.pdf pdf_icon

PD - 96291IRFP150MPbF Lead-Freewww.irf.com 103/01/10IRFP150MPbF2 www.irf.comIRFP150MPbFwww.irf.com 3IRFP150MPbF4 www.irf.comIRFP150MPbFwww.irf.com 5IRFP150MPbF6 www.irf.comIRFP150MPbFwww.irf.com 7IRFP150MPbFTO-247AC Package Outline (Dimensions are shown in millimeters (inches))TO-247AC Part Marking InformationData and specifications subject

7.4. Size:520K international rectifier
irfp150v.pdf pdf_icon

PD - 94459AIRFP150VHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 100Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 24mGl Fast Switchingl Fully Avalanche RatedID = 47ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely low on-re

7.5. Size:1024K international rectifier
irfp150npbf.pdf pdf_icon

PD - 95002IRFP150NPbF Lead-Freewww.irf.com 12/11/04IRFP150NPbF2 www.irf.comIRFP150NPbFwww.irf.com 3IRFP150NPbF4 www.irf.comIRFP150NPbFwww.irf.com 5IRFP150NPbF6 www.irf.comIRFP150NPbFwww.irf.com 7IRFP150NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)1

7.6. Size:1994K international rectifier
irfp150pbf.pdf pdf_icon

PD - 95003IRFP150PbF Lead-Free2/11/04Document Number: 91203 www.vishay.com1IRFP150PbFDocument Number: 91203 www.vishay.com2IRFP150PbFDocument Number: 91203 www.vishay.com3IRFP150PbFDocument Number: 91203 www.vishay.com4IRFP150PbFDocument Number: 91203 www.vishay.com5IRFP150PbFDocument Number: 91203 www.vishay.com6IRFP150PbFTO-247AC Package Ou

7.7. Size:487K st
irfp150 irfp151 irfp152 irfp153-fi.pdf pdf_icon

7.8. Size:1470K vishay
irfp150 sihfp150.pdf pdf_icon

IRFP150, SiHFP150Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = 10 V 0.055 Isolated Central Mounting HoleRoHS*Qg (Max.) (nC) 140 175 C Operating TemperatureCOMPLIANTQgs (nC) 29 Fast SwitchingQgd (nC) 68 Ease of ParallelingConfiguration Single S

7.9. Size:894K vishay
irfp150pbf.pdf pdf_icon

PD - 95003IRFP150PbF Lead-Freewww.irf.com 12/11/04IRFP150PbF2 www.irf.comIRFP150PbFwww.irf.com 3IRFP150PbF4 www.irf.comIRFP150PbFwww.irf.com 5IRFP150PbF6 www.irf.comIRFP150PbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)15.30 (.602)0.25 (.010) M D B M2.

7.10. Size:1141K infineon
irfp150mpbf.pdf pdf_icon

7.11. Size:1024K infineon
irfp150npbf.pdf pdf_icon

7.12. Size:241K inchange semiconductor
irfp150n.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFP150NIIRFP150NFEATURESStatic drain-source on-resistance:RDS(on)36mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

7.13. Size:400K inchange semiconductor
irfp150.pdf pdf_icon

iscN-Channel MOSFET Transistor IRFP150FEATURESLow drain-source on-resistance:RDS(ON) 55m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

7.14. Size:241K inchange semiconductor
irfp150m.pdf pdf_icon

isc N-Channel MOSFET Transistor IRFP150MIIRFP150MFEATURESStatic drain-source on-resistance:RDS(on)36mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

Datasheet: IRFP140 , IRFP140A , IRFP140N , IRFP141 , IRFP142 , IRFP143 , APT50M38JFLL , IRFP150 , 5N50 , IRFP150FI , IRFP150N , IRFP151 , IRFP152 , IRFP153 , IRFP22N50A , IRFP230 , IRFP231 .

LIST

Last Update

All MOSFET. IRFP150A Datasheet

IRFP150A MOSFET. Datasheet pdf. Equivalent

IRFP150A Datasheet (PDF)

LIST

Last Update

AllTransistors(C)