IRFP150A. Аналоги и основные параметры

Наименование производителя: IRFP150A

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 193 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 43 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 20 ns

Cossⓘ - Выходная емкость: 420 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm

Тип корпуса: TO3P

Аналог (замена) для IRFP150A

- подборⓘ MOSFET транзистора по параметрам

 

IRFP150A даташит

 ..1. Size:261K  fairchild semi
 irfp150a.pdf pdf_icon

IRFP150A

IRFP150A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 43 A Improved Gate Charge Extended Safe Operating Area TO-3P 175 C Operating Temperature A (Max.) @ VDS = 100V Lower Leakage Current 10 Lower RDS(ON) 0.032 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source

 ..2. Size:957K  samsung
 irfp150a.pdf pdf_icon

IRFP150A

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 43 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 100V 1 Lower RDS(ON) 0.032 (Typ.) 2 3 1.Gate 2. Drain 3. Source Absolute Maximum R

 ..3. Size:377K  onsemi
 irfp150a.pdf pdf_icon

IRFP150A

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..4. Size:233K  inchange semiconductor
 irfp150a.pdf pdf_icon

IRFP150A

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP150A FEATURES Drain Current I = 43A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.04 (Max) DS(on) Fast Switching 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... IRFP140, IRFP140A, IRFP140N, IRFP141, IRFP142, IRFP143, APT50M38JFLL, IRFP150, AON7403, IRFP150FI, IRFP150N, IRFP151, IRFP152, IRFP153, IRFP22N50A, IRFP230, IRFP231