IRFP15N60LPBF PDF and Equivalents Search

 ..1. Size:208K  international rectifier
 irfp15n60lpbf.pdf

PD - 95517 SMPS MOSFET IRFP15N60LPbF Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 385m 130ns 15A Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. ... See More ⇒

 ..2. Size:147K  vishay
 irfp15n60lpbf.pdf

IRFP15N60L, SiHFP15N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.385 RoHS* Lower Gate Charge Results in Simple Drive Qg (Max.) (nC) 100 COMPLIANT Requirements Qgs (nC) 30 Qgd (nC) 46 Enhanced dV/dt Capabilities Offer Improved ... See More ⇒

 4.1. Size:198K  international rectifier
 irfp15n60l.pdf

PD - 94415A SMPS MOSFET IRFP15N60L Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 385m 130ns 15A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate c... See More ⇒

 4.2. Size:233K  inchange semiconductor
 irfp15n60l.pdf

isc N-Channel MOSFET Transistor IRFP15N60L DESCRIPTION Drain Current I =40A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R =0.46 (Max) DS(on) High Power,High Speed Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching power supplies UPS Motor contro... See More ⇒

 8.1. Size:135K  international rectifier
 irfp150n.pdf

PD- 91503C IRFP150N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175 C Operating Temperature Fast Switching RDS(on) = 0.036W Fully Avalanche Rated G ID = 42A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefi... See More ⇒

 8.2. Size:167K  international rectifier
 irfp150.pdf

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 8.3. Size:1141K  international rectifier
 irfp150mpbf.pdf

PD - 96291 IRFP150MPbF Lead-Free www.irf.com 1 03/01/10 IRFP150MPbF 2 www.irf.com IRFP150MPbF www.irf.com 3 IRFP150MPbF 4 www.irf.com IRFP150MPbF www.irf.com 5 IRFP150MPbF 6 www.irf.com IRFP150MPbF www.irf.com 7 IRFP150MPbF TO-247AC Package Outline (Dimensions are shown in millimeters (inches)) TO-247AC Part Marking Information Data and specifications subject... See More ⇒

 8.4. Size:520K  international rectifier
 irfp150v.pdf

PD - 94459A IRFP150V HEXFET Power MOSFET l Advanced Process Technology D VDSS = 100V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 24m G l Fast Switching l Fully Avalanche Rated ID = 47A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re... See More ⇒

 8.5. Size:1024K  international rectifier
 irfp150npbf.pdf

PD - 95002 IRFP150NPbF Lead-Free www.irf.com 1 2/11/04 IRFP150NPbF 2 www.irf.com IRFP150NPbF www.irf.com 3 IRFP150NPbF 4 www.irf.com IRFP150NPbF www.irf.com 5 IRFP150NPbF 6 www.irf.com IRFP150NPbF www.irf.com 7 IRFP150NPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 1... See More ⇒

 8.6. Size:1994K  international rectifier
 irfp150pbf.pdf

PD - 95003 IRFP150PbF Lead-Free 2/11/04 Document Number 91203 www.vishay.com 1 IRFP150PbF Document Number 91203 www.vishay.com 2 IRFP150PbF Document Number 91203 www.vishay.com 3 IRFP150PbF Document Number 91203 www.vishay.com 4 IRFP150PbF Document Number 91203 www.vishay.com 5 IRFP150PbF Document Number 91203 www.vishay.com 6 IRFP150PbF TO-247AC Package Ou... See More ⇒

 8.7. Size:487K  st
 irfp150 irfp151 irfp152 irfp153-fi.pdf

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 8.8. Size:261K  fairchild semi
 irfp150a.pdf

IRFP150A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 43 A Improved Gate Charge Extended Safe Operating Area TO-3P 175 C Operating Temperature A (Max.) @ VDS = 100V Lower Leakage Current 10 Lower RDS(ON) 0.032 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source... See More ⇒

 8.9. Size:957K  samsung
 irfp150a.pdf

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 43 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 100V 1 Lower RDS(ON) 0.032 (Typ.) 2 3 1.Gate 2. Drain 3. Source Absolute Maximum R... See More ⇒

 8.10. Size:1470K  vishay
 irfp150 sihfp150.pdf

IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.055 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 140 175 C Operating Temperature COMPLIANT Qgs (nC) 29 Fast Switching Qgd (nC) 68 Ease of Paralleling Configuration Single S... See More ⇒

 8.11. Size:894K  vishay
 irfp150pbf.pdf

PD - 95003 IRFP150PbF Lead-Free www.irf.com 1 2/11/04 IRFP150PbF 2 www.irf.com IRFP150PbF www.irf.com 3 IRFP150PbF 4 www.irf.com IRFP150PbF www.irf.com 5 IRFP150PbF 6 www.irf.com IRFP150PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2.... See More ⇒

 8.12. Size:377K  onsemi
 irfp150a.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 8.13. Size:241K  inchange semiconductor
 irfp150n.pdf

isc N-Channel MOSFET Transistor IRFP150N IIRFP150N FEATURES Static drain-source on-resistance RDS(on) 36m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Fully Avalanche Rated ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source ... See More ⇒

 8.14. Size:233K  inchange semiconductor
 irfp150a.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP150A FEATURES Drain Current I = 43A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.04 (Max) DS(on) Fast Switching 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode ... See More ⇒

 8.15. Size:400K  inchange semiconductor
 irfp150.pdf

iscN-Channel MOSFET Transistor IRFP150 FEATURES Low drain-source on-resistance RDS(ON) 55m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒

 8.16. Size:241K  inchange semiconductor
 irfp150m.pdf

isc N-Channel MOSFET Transistor IRFP150M IIRFP150M FEATURES Static drain-source on-resistance RDS(on) 36m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Fully Avalanche Rated ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source ... See More ⇒