All MOSFET. IRFP22N50A Datasheet

 

IRFP22N50A MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFP22N50A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 277 W
   Maximum Drain-Source Voltage |Vds|: 500 V
   Maximum Gate-Source Voltage |Vgs|: 30 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 22 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 120(max) nC
   Rise Time (tr): 94 nS
   Drain-Source Capacitance (Cd): 513 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.23 Ohm
   Package: TO247AC

 IRFP22N50A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP22N50A Datasheet (PDF)

 ..1. Size:103K  international rectifier
irfp22n50a.pdf

IRFP22N50A IRFP22N50A

PD- 91833CSMPS MOSFETIRFP22N50AHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) UninterruptIble Power Supply 500V 0.23 22A High Speed Power SwitchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Curren

 ..2. Size:206K  international rectifier
irfp22n50apbf.pdf

IRFP22N50A IRFP22N50A

PD - 95004IRFP22N50APbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply (SMPS)l UninterruptIble Power Supply 500V 0.23 22Al High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalan

 ..3. Size:306K  vishay
irfp22n50a sihfp22n50a.pdf

IRFP22N50A IRFP22N50A

IRFP22N50A, SiHFP22N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.23RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 120 COMPLIANTRuggednessQgs (nC) 32 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 52and CurrentCon

 ..4. Size:311K  vishay
irfp22n50apbf sihfp22n50a.pdf

IRFP22N50A IRFP22N50A

IRFP22N50A, SiHFP22N50AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.23RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 120 COMPLIANTRuggednessQgs (nC) 32 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 52and CurrentCon

 ..5. Size:1063K  infineon
irfp22n50apbf.pdf

IRFP22N50A IRFP22N50A

IRFP22N50APbF HEXFET Power MOSFET ApplicationsDV 500V DSS Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply RDS(on) max 0.23 G High speed power switching I 22A D (Silicon Limited) SD Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness S Fully

 ..6. Size:400K  inchange semiconductor
irfp22n50a.pdf

IRFP22N50A IRFP22N50A

iscN-Channel MOSFET Transistor IRFP22N50AFEATURESLow drain-source on-resistance:RDS(ON) =0.23 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

 7.1. Size:219K  international rectifier
irfp22n60c3pbf.pdf

IRFP22N50A IRFP22N50A

PD - 95005SMPS MOSFETIRFP22N60C3PbF Superjunction Power MOSFETAppIicationsl PFC and Primary Switch in SMPSl Uninterruptible Power SupplyVDSS@TJ max RDS(on) typ. IDl High Speed Power Switchingl Hard Switched and High Frequency Circuits650V 155m 22A l Lead-FreeBenefitsDl Ultra Low Gate Charge Qg results in Simple DriveRequirement l Improved Gate, Avalanche and Dy

 7.2. Size:123K  international rectifier
irfp22n60k.pdf

IRFP22N50A IRFP22N50A

PD - 94414IRFP22N60KSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. IDl Hard Switching Primary or PFS Switch600V 240m 22Al Switch Mode Power Supply (SMPS)l Uninterruptible Power Supplyl High Speed Power Switchingl Motor DriveBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamic dv/dt Ruggednessl Full

 7.3. Size:179K  vishay
irfp22n60k sihfp22n60k.pdf

IRFP22N50A IRFP22N50A

IRFP22N60K, SiHFP22N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600RequirementAvailableRDS(on) ()VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 150COMPLIANTRuggednessQgs (nC) 45 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 76and CurrentCo

 7.4. Size:177K  vishay
irfp22n60k irfp22n60kpbf sihfp22n60k.pdf

IRFP22N50A IRFP22N50A

IRFP22N60K, SiHFP22N60KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600RequirementAvailableRDS(on) ()VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 150COMPLIANTRuggednessQgs (nC) 45 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 76and CurrentCo

 7.5. Size:401K  inchange semiconductor
irfp22n60k.pdf

IRFP22N50A IRFP22N50A

iscN-Channel MOSFET Transistor IRFP22N60KFEATURESLow drain-source on-resistance:RDS(ON) =0.28 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

Datasheet: APT50M38JFLL , IRFP150 , IRFP150A , IRFP150FI , IRFP150N , IRFP151 , IRFP152 , IRFP153 , AO4468 , IRFP230 , IRFP231 , IRFP232 , IRFP233 , APT50M38JLL , IRFP240 , IRFP240A , IRFP240FI .

 

 
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