All MOSFET. IXZR18N50B Datasheet

 

IXZR18N50B Datasheet and Replacement


   Type Designator: IXZR18N50B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 350 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Cossⓘ - Output Capacitance: 172 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm
   Package: ISOPLUS247
 

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IXZR18N50B Datasheet (PDF)

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IXZR18N50B

IXZR18N50 & IXZR18N50A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 500 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 19 A RDS(on) 0.37 Symbol Test Conditions Maximum Ratings TJ = 25C to 150C VDSS 500 V PDC = 350 W TJ = 25C to 150C; RGS

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 ixzr16n60a ixzr16n60b.pdf pdf_icon

IXZR18N50B

IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET NChannel Enhancement Mode N-Channel Enhancement Mode Switch Mode RF MOSFET Low Qg and Rg Low Capacitance Z-MOSTM MOSFET Process VDSS = 600 V High dv/dt Optimized for RF Operation Nanosecond Switching Ideal for Class C, D, & E Applications ID25 = 18 A Symbol Test Conditions Maximum Ratings RDS(on) 0.56

Datasheet: IRFP3077PBF , IRFP31N50L , IRFP31N50LPBF , IRFP3206PBF , IRFP32N50K , IRFP32N50KPBF , IRFP3306PBF , IRFP340PBF , IRFP450 , IXZR18N50A , IXZR16N60B , IXZR16N60A , IXZR08N120B , IXZR08N120A , IXZH10N50LB , IXZH10N50LA , IXZ318N50 .

History: AUIRFS8409-7P | TPP70R950C | H04N65E | AP2304AGN | AP70SL380AS | HGB025N06S | AP9571GP-HF

Keywords - IXZR18N50B MOSFET datasheet

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