IXZR08N120B Specs and Replacement

Type Designator: IXZR08N120B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 86 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: ISOPLUS247

IXZR08N120B substitution

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IXZR08N120B datasheet

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IXZR08N120B

IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 1200 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 8.0 A RDS(on) Symbol Test Conditions Maximum Ratings 1.5 TJ = 25 C to 150 C VDSS 1200 V PDC = 250 W TJ = 25 C to 150 C; ... See More ⇒

Detailed specifications: IRFP32N50K, IRFP32N50KPBF, IRFP3306PBF, IRFP340PBF, IXZR18N50B, IXZR18N50A, IXZR16N60B, IXZR16N60A, TK10A60D, IXZR08N120A, IXZH10N50LB, IXZH10N50LA, IXZ318N50, IXZ316N60, IXZ308N120, IXZ2210N50L, IXZ210N50L

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.