All MOSFET. IXZR08N120B Datasheet

 

IXZR08N120B MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXZR08N120B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.9 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 39 nC
   Cossⓘ - Output Capacitance: 86 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: ISOPLUS247

 IXZR08N120B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXZR08N120B Datasheet (PDF)

 ..1. Size:160K  ixys
 ixzr08n120a ixzr08n120b.pdf

IXZR08N120B IXZR08N120B

IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 1200 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 8.0 A RDS(on) Symbol Test Conditions Maximum Ratings 1.5 TJ = 25C to 150C VDSS 1200 V PDC = 250 W TJ = 25C to 150C;

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HFW5N65U | FDMC7570S | SI4833DY | STU409DH | 4N90G-TF3-T | 2N6761 | BUK7619-100B

 

 
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