All MOSFET. IXZR08N120B Datasheet

 

IXZR08N120B Datasheet and Replacement


   Type Designator: IXZR08N120B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Cossⓘ - Output Capacitance: 86 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: ISOPLUS247
      - MOSFET Cross-Reference Search

 

IXZR08N120B Datasheet (PDF)

 ..1. Size:160K  ixys
 ixzr08n120a ixzr08n120b.pdf pdf_icon

IXZR08N120B

IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 1200 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 8.0 A RDS(on) Symbol Test Conditions Maximum Ratings 1.5 TJ = 25C to 150C VDSS 1200 V PDC = 250 W TJ = 25C to 150C;

Datasheet: IRFP32N50K , IRFP32N50KPBF , IRFP3306PBF , IRFP340PBF , IXZR18N50B , IXZR18N50A , IXZR16N60B , IXZR16N60A , 4435 , IXZR08N120A , IXZH10N50LB , IXZH10N50LA , IXZ318N50 , IXZ316N60 , IXZ308N120 , IXZ2210N50L , IXZ210N50L .

History: BSB056N10NN3G | BSB280N15NZ3G | 12N65KG-TF1-T | AONR32320C | R5016ANJ | ELM13401CA | DH150N12B

Keywords - IXZR08N120B MOSFET datasheet

 IXZR08N120B cross reference
 IXZR08N120B equivalent finder
 IXZR08N120B lookup
 IXZR08N120B substitution
 IXZR08N120B replacement

 

 
Back to Top

 


 
.