All MOSFET. IXZH10N50LA Datasheet

 

IXZH10N50LA Datasheet and Replacement


   Type Designator: IXZH10N50LA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Cossⓘ - Output Capacitance: 78 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-247AD
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IXZH10N50LA Datasheet (PDF)

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IXZH10N50LA

IXZH10N50LA/B RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET VDSS = 500 V Low Capacitance Z-MOSTM MOSFET Process ID25 = 10 A Optimized for Linear Operation in Common Source Mode 150V (operating) Symbol Test Conditions Maximum Ratings TJ = 25C to 150C VDSS 500 VTJ = 25C to 150C; RGS = 1 M VDGR 500 V Continuous VGS 20 V Transient VG

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IRFR4615 | IRLU9343PBF | 2SK3437 | HSCC8204 | SFQ030N80C2 | 15NM70L-TF34-T | VST012N06MS

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