IXZ318N50 Specs and Replacement

Type Designator: IXZ318N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 880 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm

Package: SMD-6

IXZ318N50 substitution

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IXZ318N50 datasheet

 ..1. Size:137K  ixys
 ixz318n50.pdf pdf_icon

IXZ318N50

IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 500 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 19 A RDS(on) Symbol Test Conditions Maximum Ratings 0.34 TJ = 25 C to 150 C VDSS 500 V PDC = 880 W TJ = 25 C to 150 C; RGS = 1 M VDGR... See More ⇒

 9.1. Size:136K  ixys
 ixz316n60.pdf pdf_icon

IXZ318N50

IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 600 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 18 A RDS(on) Symbol Test Conditions Maximum Ratings 0.47 TJ = 25 C to 150 C VDSS 600 V PDC = 880 W TJ = 25 C to 150 C; RGS = 1 M VDGR... See More ⇒

Detailed specifications: IXZR18N50B, IXZR18N50A, IXZR16N60B, IXZR16N60A, IXZR08N120B, IXZR08N120A, IXZH10N50LB, IXZH10N50LA, IRFP250, IXZ316N60, IXZ308N120, IXZ2210N50L, IXZ210N50L, IXUN350N10, IXUC200N055, IXUC100N055, IXTY90N055T2

Keywords - IXZ318N50 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.