All MOSFET. IXZ318N50 Datasheet

 

IXZ318N50 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXZ318N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 880 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 6.5 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Cossⓘ - Output Capacitance: 175 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm
   Package: SMD-6

 IXZ318N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXZ318N50 Datasheet (PDF)

 ..1. Size:137K  ixys
 ixz318n50.pdf

IXZ318N50 IXZ318N50

IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 500 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 19 A RDS(on) Symbol Test Conditions Maximum Ratings 0.34 TJ = 25C to 150C VDSS 500 V PDC = 880 W TJ = 25C to 150C; RGS = 1 M VDGR

 9.1. Size:136K  ixys
 ixz316n60.pdf

IXZ318N50 IXZ318N50

IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 600 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 18 A RDS(on) Symbol Test Conditions Maximum Ratings 0.47 TJ = 25C to 150C VDSS 600 V PDC = 880 W TJ = 25C to 150C; RGS = 1 M VDGR

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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