All MOSFET. IXZ316N60 Datasheet

 

IXZ316N60 Datasheet and Replacement


   Type Designator: IXZ316N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 880 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
   Package: SMD-6
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IXZ316N60 Datasheet (PDF)

 ..1. Size:136K  ixys
 ixz316n60.pdf pdf_icon

IXZ316N60

IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 600 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 18 A RDS(on) Symbol Test Conditions Maximum Ratings 0.47 TJ = 25C to 150C VDSS 600 V PDC = 880 W TJ = 25C to 150C; RGS = 1 M VDGR

 9.1. Size:137K  ixys
 ixz318n50.pdf pdf_icon

IXZ316N60

IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 500 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 19 A RDS(on) Symbol Test Conditions Maximum Ratings 0.34 TJ = 25C to 150C VDSS 500 V PDC = 880 W TJ = 25C to 150C; RGS = 1 M VDGR

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History: FQD4N25TM | 2SK3192

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