All MOSFET. IXZ316N60 Datasheet

 

IXZ316N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXZ316N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 880 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
   Package: SMD-6

 IXZ316N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXZ316N60 Datasheet (PDF)

 ..1. Size:136K  ixys
 ixz316n60.pdf

IXZ316N60 IXZ316N60

IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 600 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 18 A RDS(on) Symbol Test Conditions Maximum Ratings 0.47 TJ = 25C to 150C VDSS 600 V PDC = 880 W TJ = 25C to 150C; RGS = 1 M VDGR

 9.1. Size:137K  ixys
 ixz318n50.pdf

IXZ316N60 IXZ316N60

IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 500 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 19 A RDS(on) Symbol Test Conditions Maximum Ratings 0.34 TJ = 25C to 150C VDSS 500 V PDC = 880 W TJ = 25C to 150C; RGS = 1 M VDGR

Datasheet: IXZR18N50A , IXZR16N60B , IXZR16N60A , IXZR08N120B , IXZR08N120A , IXZH10N50LB , IXZH10N50LA , IXZ318N50 , IRFZ46N , IXZ308N120 , IXZ2210N50L , IXZ210N50L , IXUN350N10 , IXUC200N055 , IXUC100N055 , IXTY90N055T2 , IXTY8N65X2 .

History: DMC1028UFDB | DMG3415UFY4

 

 
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