IXZ316N60 Specs and Replacement

Type Designator: IXZ316N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 880 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm

Package: SMD-6

IXZ316N60 substitution

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IXZ316N60 datasheet

 ..1. Size:136K  ixys
 ixz316n60.pdf pdf_icon

IXZ316N60

IXZ316N60 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 600 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 18 A RDS(on) Symbol Test Conditions Maximum Ratings 0.47 TJ = 25 C to 150 C VDSS 600 V PDC = 880 W TJ = 25 C to 150 C; RGS = 1 M VDGR... See More ⇒

 9.1. Size:137K  ixys
 ixz318n50.pdf pdf_icon

IXZ316N60

IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process VDSS = 500 V Optimized for RF Operation Ideal for Class C, D, & E Applications ID25 = 19 A RDS(on) Symbol Test Conditions Maximum Ratings 0.34 TJ = 25 C to 150 C VDSS 500 V PDC = 880 W TJ = 25 C to 150 C; RGS = 1 M VDGR... See More ⇒

Detailed specifications: IXZR18N50A, IXZR16N60B, IXZR16N60A, IXZR08N120B, IXZR08N120A, IXZH10N50LB, IXZH10N50LA, IXZ318N50, IRF1407, IXZ308N120, IXZ2210N50L, IXZ210N50L, IXUN350N10, IXUC200N055, IXUC100N055, IXTY90N055T2, IXTY8N65X2

Keywords - IXZ316N60 MOSFET specs

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