IXZ2210N50L Specs and Replacement

Type Designator: IXZ2210N50L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 940 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 77 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: SMD-6

IXZ2210N50L substitution

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IXZ2210N50L datasheet

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IXZ2210N50L

IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET VDSS = 500 V Low Capacitance Z-MOSTM MOSFET Process ID25 = 10 A Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications 150V (operating) Note All data is per the IXZ210N50L single ended device unless otherwise noted. 300 & 550 Watts Symbol Tes... See More ⇒

Detailed specifications: IXZR16N60A, IXZR08N120B, IXZR08N120A, IXZH10N50LB, IXZH10N50LA, IXZ318N50, IXZ316N60, IXZ308N120, 10N65, IXZ210N50L, IXUN350N10, IXUC200N055, IXUC100N055, IXTY90N055T2, IXTY8N65X2, IXTY4N65X2, IXTY2N65X2

Keywords - IXZ2210N50L MOSFET specs

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