All MOSFET. IXUC100N055 Datasheet

 

IXUC100N055 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXUC100N055
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 100 nC
   trⓘ - Rise Time: 115 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0077 Ohm
   Package: ISOPLUS-220

 IXUC100N055 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXUC100N055 Datasheet (PDF)

 ..1. Size:539K  ixys
 ixuc100n055.pdf

IXUC100N055 IXUC100N055

ADVANCE TECHNICAL INFORMATIONTrench Power MOSFET IXUC100N055 VDSS = 55 VISOPLUS220TM ID25 = 100 AElectrically Isolated Back Surface RDS(on)= 7.7 mISOPLUS 220TMSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C55 VGDVGS Continuous 20 VSIsolated back surface*ID25 TC = 25C; Note 1 100 AG = Gate, D = Drain,ID90 TC = 90C, Note 1 8

 9.1. Size:511K  ixys
 ixuc160n075.pdf

IXUC100N055 IXUC100N055

ADVANCED TECHNICAL INFORMATIONTrench Power MOSFET IXUC160N075 VDSS = 75 VISOPLUS220TM ID25 = 160 AElectrically Isolated Back Surface RDS(on)= 6.5 mISOPLUS 220TMSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C75 VDSIsolated back surface*VGS Continuous 20 VID25 TC = 25C; Note 1 160 A G = Gate, D = Drain,S = SourceID90 TC = 90

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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