IXUC100N055 Specs and Replacement

Type Designator: IXUC100N055

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 115 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0077 Ohm

Package: ISOPLUS-220

IXUC100N055 substitution

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IXUC100N055 datasheet

 ..1. Size:539K  ixys
 ixuc100n055.pdf pdf_icon

IXUC100N055

ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC100N055 VDSS = 55 V ISOPLUS220TM ID25 = 100 A Electrically Isolated Back Surface RDS(on)= 7.7 m ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C55 V G D VGS Continuous 20 V S Isolated back surface* ID25 TC = 25 C; Note 1 100 A G = Gate, D = Drain, ID90 TC = 90 C, Note 1 8... See More ⇒

 9.1. Size:511K  ixys
 ixuc160n075.pdf pdf_icon

IXUC100N055

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Detailed specifications: IXZH10N50LA, IXZ318N50, IXZ316N60, IXZ308N120, IXZ2210N50L, IXZ210N50L, IXUN350N10, IXUC200N055, AO3407, IXTY90N055T2, IXTY8N65X2, IXTY4N65X2, IXTY2N65X2, IXTY1R4N120P, IXTY1N120P, IXTX210P10T, IXTX20N150

Keywords - IXUC100N055 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.