All MOSFET. IRFP231 Datasheet

 

IRFP231 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFP231
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 75 W
   Maximum Drain-Source Voltage |Vds|: 150 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 9 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 19 nC
   Rise Time (tr): 50(max) nS
   Drain-Source Capacitance (Cd): 120 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm
   Package: TO3P

 IRFP231 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP231 Datasheet (PDF)

 8.1. Size:104K  international rectifier
irfp23n50l.pdf

IRFP231 IRFP231

PD - 94230SMPS MOSFETIRFP23N50LHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. Trr typ. ID Switch Mode Power Supply (SMPS)500V 0.190 170ns 23A UninterruptIble Power Supply High Speed Power Switching Motor DriveBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance and

 8.2. Size:186K  samsung
irfp230-233 irf630-633.pdf

IRFP231 IRFP231

 8.3. Size:188K  vishay
irfp23n50l sihfp23n50l.pdf

IRFP231 IRFP231

IRFP23N50L, SiHFP23N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS ApplicationsAvailableRDS(on) ()VGS = 10 V 0.190 Lower Gate Charge Results in Simpler DriveRoHS*Qg (Max.) (nC) 150COMPLIANTRequirementsQgs (nC) 44 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 8.4. Size:192K  vishay
irfp23n50l irfp23n50lpbf sihfp23n50l.pdf

IRFP231 IRFP231

IRFP23N50L, SiHFP23N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 500External Diodes in ZVS ApplicationsAvailableRDS(on) ()VGS = 10 V 0.190 Lower Gate Charge Results in Simpler DriveRoHS*Qg (Max.) (nC) 150COMPLIANTRequirementsQgs (nC) 44 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 8.5. Size:400K  inchange semiconductor
irfp23n50l.pdf

IRFP231 IRFP231

iscN-Channel MOSFET Transistor IRFP23N50LFEATURESLow drain-source on-resistance:RDS(ON) =0.235 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

Datasheet: IRFP150A , IRFP150FI , IRFP150N , IRFP151 , IRFP152 , IRFP153 , IRFP22N50A , IRFP230 , AO4466 , IRFP232 , IRFP233 , APT50M38JLL , IRFP240 , IRFP240A , IRFP240FI , IRFP241 , IRFP242 .

 

 
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