IXTX210P10T Specs and Replacement

Type Designator: IXTX210P10T

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1040 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 210 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 98 nS

Cossⓘ - Output Capacitance: 4070 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: PLUS247

IXTX210P10T substitution

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IXTX210P10T datasheet

 ..1. Size:179K  ixys
 ixtk210p10t ixtx210p10t.pdf pdf_icon

IXTX210P10T

Advance Technical Information TrenchPTM VDSS = - 100V IXTK210P10T Power MOSFETs ID25 = - 210A IXTX210P10T RDS(on) 7.5m trr 200ns P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXTK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C -100 V D S VDGR TJ = 25 C to 150 C, RGS ... See More ⇒

 9.1. Size:129K  ixys
 ixtk20n150 ixtx20n150.pdf pdf_icon

IXTX210P10T

High Voltage Power VDSS = 1500V IXTK20N150 MOSFETs w/ Extended ID25 = 20A IXTX20N150 FBSOA RDS(on) ... See More ⇒

 9.2. Size:260K  inchange semiconductor
 ixtx200n10l2.pdf pdf_icon

IXTX210P10T

isc N-Channel MOSFET Transistor IXTX200N10L2 FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V ... See More ⇒

Detailed specifications: IXUC200N055, IXUC100N055, IXTY90N055T2, IXTY8N65X2, IXTY4N65X2, IXTY2N65X2, IXTY1R4N120P, IXTY1N120P, 2N60, IXTX20N150, IXTX120P20T, IXTX120N65X2, IXTX102N65X2, IXTV230N085TS, IXTT6N150, IXTT4N150HV, IXTT3N200P3HV

Keywords - IXTX210P10T MOSFET specs

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