All MOSFET. IXTX210P10T Datasheet

 

IXTX210P10T Datasheet and Replacement


   Type Designator: IXTX210P10T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1040 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 210 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 98 nS
   Cossⓘ - Output Capacitance: 4070 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: PLUS247
 

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IXTX210P10T Datasheet (PDF)

 ..1. Size:179K  ixys
 ixtk210p10t ixtx210p10t.pdf pdf_icon

IXTX210P10T

Advance Technical InformationTrenchPTM VDSS = - 100VIXTK210P10TPower MOSFETs ID25 = - 210AIXTX210P10T RDS(on) 7.5m trr 200nsP-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-264 (IXTK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C -100 V DSVDGR TJ = 25C to 150C, RGS

 9.1. Size:129K  ixys
 ixtk20n150 ixtx20n150.pdf pdf_icon

IXTX210P10T

High Voltage PowerVDSS = 1500VIXTK20N150MOSFETs w/ ExtendedID25 = 20AIXTX20N150FBSOARDS(on)

 9.2. Size:260K  inchange semiconductor
 ixtx200n10l2.pdf pdf_icon

IXTX210P10T

isc N-Channel MOSFET Transistor IXTX200N10L2FEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV

Datasheet: IXUC200N055 , IXUC100N055 , IXTY90N055T2 , IXTY8N65X2 , IXTY4N65X2 , IXTY2N65X2 , IXTY1R4N120P , IXTY1N120P , IRF830 , IXTX20N150 , IXTX120P20T , IXTX120N65X2 , IXTX102N65X2 , IXTV230N085TS , IXTT6N150 , IXTT4N150HV , IXTT3N200P3HV .

History: GP2M012A060X | HM60N05 | BLP039N08-B | SSM6K407TU | NCE60N1K0I | HM8N20 | HFD5N65U

Keywords - IXTX210P10T MOSFET datasheet

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