All MOSFET. IXTX120N65X2 Datasheet

 

IXTX120N65X2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTX120N65X2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 240 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 9920 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: PLUS247

 IXTX120N65X2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTX120N65X2 Datasheet (PDF)

 ..1. Size:159K  ixys
 ixtk120n65x2 ixtx120n65x2.pdf

IXTX120N65X2 IXTX120N65X2

Advance Technical InformationX2-Class VDSS = 650VIXTK120N65X2Power MOSFET ID25 = 120AIXTX120N65X2 RDS(on) 24m N-Channel Enhancement ModeAvalanche RatedTO-264P (IXTK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 650 VDTabVDGR TJ = 25C to 150C, RGS = 1M 650 V SVGSS Continuous 30 VPLUS247 (IX

 7.1. Size:178K  ixys
 ixtk120p20t ixtx120p20t.pdf

IXTX120N65X2 IXTX120N65X2

Advance Technical InformationTrenchPTM VDSS = - 200VIXTK120P20TPower MOSFETs ID25 = - 120AIXTX120P20T RDS(on) 30m trr 300nsP-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-264 (IXTK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C - 200 V DSVDGR TJ = 25C to 150C, RGS

 9.1. Size:177K  ixys
 ixtk170p10p ixtx170p10p.pdf

IXTX120N65X2 IXTX120N65X2

PolarPTM VDSS = -100V IXTK170P10PID25 = -170APower MOSFET IXTX170P10P RDS(on) 12m P-Channel Enhancement ModeAvalanche RatedTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C -100 VVDGR TJ = 25C to 150C, RGS = 1M -100 V GD (TAB)SVGSS Continuous 20 VVGSM Transient 30 VID25 TC = 25C -1

 9.2. Size:88K  ixys
 ixtk17n120l ixtx17n120l.pdf

IXTX120N65X2 IXTX120N65X2

Advance Technical InformationIXTK17N120L VDSS = 1200 VLinear Power MOSFETIXTX17N120L ID25 = 17 AWith Extended FBSOA RDS(on) 0.99 N-Channel Enhancement ModeTO-264 (IXTK)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VGDVGS Continuous 30 VS(TAB)VGSM Transient

 9.3. Size:158K  ixys
 ixtk110n20l2 ixtx110n20l2.pdf

IXTX120N65X2 IXTX120N65X2

Advance Technical InformationLinearL2TM Power VDSS = 200VIXTK110N20L2MOSFET w/ExtendedID25 = 110AIXTX110N20L2FBSOARDS(on)

 9.4. Size:193K  ixys
 ixtk102n65x2 ixtx102n65x2.pdf

IXTX120N65X2 IXTX120N65X2

Preliminary Technical InformationX2-Class VDSS = 650VIXTK102N65X2Power MOSFET ID25 = 102AIXTX102N65X2 RDS(on) 30m N-Channel Enhancement ModeAvalanche RatedTO-264P (IXTK)Fast Intrinsic DiodeSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 650 VDTabVDGR TJ = 25C to 150C, RGS = 1M 650 V SVGSS Contin

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: BUK761R5-40E

 

 
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