IXTX102N65X2 MOSFET Datasheet: N-Ch, 650V, 102A. Full specification with pinout and replacement list

IXTX102N65X2 Specs and Replacement

Type Designator: IXTX102N65X2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1040 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 102 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 6100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: PLUS247

IXTX102N65X2 substitution

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IXTX102N65X2 datasheet

..1. Size:193K ixys
ixtk102n65x2 ixtx102n65x2.pdf pdf_icon

Preliminary Technical Information X2-Class VDSS = 650V IXTK102N65X2 Power MOSFET ID25 = 102A IXTX102N65X2 RDS(on) 30m N-Channel Enhancement Mode Avalanche Rated TO-264P (IXTK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 650 V D Tab VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS Contin... See More ⇒

9.1. Size:178K ixys
ixtk120p20t ixtx120p20t.pdf pdf_icon

Advance Technical Information TrenchPTM VDSS = - 200V IXTK120P20T Power MOSFETs ID25 = - 120A IXTX120P20T RDS(on) 30m trr 300ns P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXTK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C - 200 V D S VDGR TJ = 25 C to 150 C, RGS ... See More ⇒

9.2. Size:177K ixys
ixtk170p10p ixtx170p10p.pdf pdf_icon

PolarPTM VDSS = -100V IXTK170P10P ID25 = -170A Power MOSFET IXTX170P10P RDS(on) 12m P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C -100 V VDGR TJ = 25 C to 150 C, RGS = 1M -100 V G D (TAB) S VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C -1... See More ⇒

9.3. Size:88K ixys
ixtk17n120l ixtx17n120l.pdf pdf_icon