IXTT4N150HV Specs and Replacement

Type Designator: IXTT4N150HV

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 280 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm

Package: TO-268HV

IXTT4N150HV substitution

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IXTT4N150HV datasheet

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IXTT4N150HV

High Voltage VDSS = 1500V IXTA4N150HV ID25 = 4A Power MOSFETs IXTT4N150HV RDS(on) 6 N-Channel Enhancement Mode Fast Intrinsic Diode TO-263HV Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 1500 V S VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V D (Tab) VGSS Continuous 30 V VGSM Trans... See More ⇒

Detailed specifications: IXTY1N120P, IXTX210P10T, IXTX20N150, IXTX120P20T, IXTX120N65X2, IXTX102N65X2, IXTV230N085TS, IXTT6N150, IRF1405, IXTT3N200P3HV, IXTT2N300P3HV, IXTT2N170D2, IXTT1N450HV, IXTT1N300P3HV, IXTT1N250HV, IXTT140P10T, IXTT12N150HV

Keywords - IXTT4N150HV MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs