All MOSFET. IXTT4N150HV Datasheet

 

IXTT4N150HV Datasheet and Replacement


   Type Designator: IXTT4N150HV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: TO-268HV
 

 IXTT4N150HV substitution

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IXTT4N150HV Datasheet (PDF)

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IXTT4N150HV

High Voltage VDSS = 1500VIXTA4N150HVID25 = 4APower MOSFETsIXTT4N150HV RDS(on) 6 N-Channel Enhancement ModeFast Intrinsic DiodeTO-263HVSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 1500 VSVDGR TJ = 25C to 150C, RGS = 1M 1500 VD (Tab)VGSS Continuous 30 VVGSM Trans

Datasheet: IXTY1N120P , IXTX210P10T , IXTX20N150 , IXTX120P20T , IXTX120N65X2 , IXTX102N65X2 , IXTV230N085TS , IXTT6N150 , IRF1405 , IXTT3N200P3HV , IXTT2N300P3HV , IXTT2N170D2 , IXTT1N450HV , IXTT1N300P3HV , IXTT1N250HV , IXTT140P10T , IXTT12N150HV .

History: IXTP75N10P | IXTH21N50 | CSFR2N60U

Keywords - IXTT4N150HV MOSFET datasheet

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