IXTR140P10T Specs and Replacement
Type Designator: IXTR140P10T
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 270 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 2045 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: TO-247 ISOPLUS-247
IXTR140P10T substitution
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IXTR140P10T datasheet
ixtr140p10t.pdf
Preliminary Technical Information TrenchPTM VDSS = -100V IXTR140P10T Power MOSFET ID25 = - 90A RDS(on) 13m P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C -100 V G VDGR TJ = 25 C to 150 C, RGS = 1M -100 V Isolated Tab D S VGSS Continuous 15 V VGSM Transient... See More ⇒
ixtr120p20t.pdf
Advance Technical Information TrenchPTM VDSS = - 200V IXTR120P20T Power MOSFETs ID25 = - 90A RDS(on) 32m trr 300ns P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C - 200 V VDGR TJ = 25 C to 150 C, RGS = 1M - 200 V ... See More ⇒
ixtr102n65x2.pdf
Advance Technical Information X2-Class VDSS = 650V IXTR102N65X2 Power MOSFET ID25 = 54A RDS(on) 33m (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G VG... See More ⇒
Detailed specifications: IXTT1N300P3HV, IXTT1N250HV, IXTT140P10T, IXTT12N150HV, IXTT12N150, IXTT02N450HV, IXTR68P20T, IXTR210P10T, AOD4184A, IXTR120P20T, IXTR102N65X2, IXTQ80N28T, IXTQ32N65X, IXTQ180N055T, IXTQ130N20T, IXTP8N65X2M, IXTP8N65X2
Keywords - IXTR140P10T MOSFET specs
IXTR140P10T cross reference
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IXTR140P10T substitution
IXTR140P10T replacement
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History: IPI80N08S2-07
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