All MOSFET. IXTR102N65X2 Datasheet

 

IXTR102N65X2 Datasheet and Replacement


   Type Designator: IXTR102N65X2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 330 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 54 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 6100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: ISOPLUS-247
 

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IXTR102N65X2 Datasheet (PDF)

 ..1. Size:145K  ixys
 ixtr102n65x2.pdf pdf_icon

IXTR102N65X2

Advance Technical InformationX2-Class VDSS = 650VIXTR102N65X2Power MOSFET ID25 = 54A RDS(on) 33m (Electrically Isolated Tab)N-Channel Enhancement ModeAvalanche RatedISOPLUS247E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VGVG

 9.1. Size:196K  ixys
 ixtr120p20t.pdf pdf_icon

IXTR102N65X2

Advance Technical InformationTrenchPTM VDSS = - 200VIXTR120P20TPower MOSFETs ID25 = - 90A RDS(on) 32m trr 300nsP-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierISOPLUS247E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C - 200 VVDGR TJ = 25C to 150C, RGS = 1M - 200 V

 9.2. Size:192K  ixys
 ixtr140p10t.pdf pdf_icon

IXTR102N65X2

Preliminary Technical InformationTrenchPTM VDSS = -100VIXTR140P10TPower MOSFET ID25 = - 90A RDS(on) 13m P-Channel Enhancement ModeAvalanche RatedISOPLUS247E153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C -100 VGVDGR TJ = 25C to 150C, RGS = 1M -100 VIsolated TabDSVGSS Continuous 15 VVGSM Transient

Datasheet: IXTT140P10T , IXTT12N150HV , IXTT12N150 , IXTT02N450HV , IXTR68P20T , IXTR210P10T , IXTR140P10T , IXTR120P20T , 60N06 , IXTQ80N28T , IXTQ32N65X , IXTQ180N055T , IXTQ130N20T , IXTP8N65X2M , IXTP8N65X2 , IXTP80N075L2 , IXTP7N50A .

History: D18N20 | IPD035N06L3G

Keywords - IXTR102N65X2 MOSFET datasheet

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