IXTP4N90 Datasheet: MOSFET, N-Ch, 900V, 4A. Full specification with pinout and replacement list

IXTP4N90 Datasheet. Specs and Replacement

Type Designator: IXTP4N90 📄📄

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO-220

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IXTP4N90 substitution

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IXTP4N90 datasheet

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Preliminary Technical Information X2-Class VDSS = 650V IXTY4N65X2 Power MOSFET ID25 = 4A IXTA4N65X2 RDS(on) 850m IXTP4N65X2 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 650 V TO-263 (IXTA) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G ... See More ⇒

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X2-Class VDSS = 650V IXTY4N65X2 Power MOSFET ID25 = 4A IXTA4N65X2 RDS(on) 850m IXTP4N65X2 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 650 V TO-263 (IXTA) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G VGSM Transient 40 V S ID25 TC... See More ⇒