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IXTP4N90 Spec and Replacement


   Type Designator: IXTP4N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO-220

 IXTP4N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTP4N90 Specs

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IXTP4N90

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IXTP4N90

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 8.1. Size:238K  ixys
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IXTP4N90

Preliminary Technical Information X2-Class VDSS = 650V IXTY4N65X2 Power MOSFET ID25 = 4A IXTA4N65X2 RDS(on) 850m IXTP4N65X2 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 650 V TO-263 (IXTA) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G ... See More ⇒

 8.2. Size:313K  ixys
 ixty4n65x2 ixta4n65x2 ixtp4n65x2.pdf pdf_icon

IXTP4N90

X2-Class VDSS = 650V IXTY4N65X2 Power MOSFET ID25 = 4A IXTA4N65X2 RDS(on) 850m IXTP4N65X2 N-Channel Enhancement Mode TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 150 C 650 V TO-263 (IXTA) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G VGSM Transient 40 V S ID25 TC... See More ⇒

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Detailed specifications: IXTP7N45A , IXTP7N45 , IXTP6N60A , IXTP6N60 , IXTP64N10L2 , IXTP4N95A , IXTP4N95 , IXTP4N90A , IRF640N , IXTP4N80A , IXTP4N80 , IXTP4N65X2 , IXTP4N50A , IXTP4N50 , IXTP4N45A , IXTP4N45 , IXTP4N100A .

History: FBM80N70P | UPA1981 | F4N60 | JCS8N60C | AP4406A | RJK0390DPA

Keywords - IXTP4N90 MOSFET specs

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