IXTP2N65X2 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTP2N65X2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 129 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: TO-220
IXTP2N65X2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTP2N65X2 Datasheet (PDF)
ixtp2n65x2 ixty2n65x2.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Preliminary Technical InformationX2-Class VDSS = 650VIXTY2N65X2Power MOSFET ID25 = 2AIXTP2N65X2 RDS(on) 2.3 N-Channel Enhancement ModeTO-252 (IXTY)G SSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VTO-220 (IXTP)VGSS Continuous 30 VVGSM Transient
ixta2n80 ixtp2n80.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
VDSS = 800 VHigh Voltage MOSFET IXTA 2N80ID25 = 2 AIXTP 2N80 RDS(on) = 6.2 N-Channel Enhancement ModeAvalanche Energy RatedPreliminary DataSymbol Test Conditions Maximum Ratings TO-220AB (IXTP)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 VDSID25 TC = 25C2 A
ixta2n100 ixtp2n100.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
High Voltage VDSS = 1000 VIXTA 2N100MOSFET ID25 = 2 AIXTP 2N100RDS(on) = 7 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-220AB (IXTP)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 VDSID25 TC = 25C2 AIDM TC = 25C, pulse width limited by
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .