IXTP160N085T Specs and Replacement

Type Designator: IXTP160N085T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 360 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 61 nS

Cossⓘ - Output Capacitance: 927 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO-220

IXTP160N085T substitution

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IXTP160N085T datasheet

 ..1. Size:133K  ixys
 ixtp160n085t.pdf pdf_icon

IXTP160N085T

Advance Technical Information IXTQ 160N085T VDSS = 85 V Trench Gate IXTA 160N085T ID25 = 160 A Power MOSFET IXTP 160N085T RDS(on) = 6.0 m N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C85 V G VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V D (TAB) S VGSM 20 V TO-220 (IXTP) ID25 TC = 25 C 160 A IDRM... See More ⇒

 5.1. Size:174K  ixys
 ixta160n075t ixtp160n075t.pdf pdf_icon

IXTP160N085T

Preliminary Technical Information IXTA160N075T VDSS = 75 V TrenchMVTM IXTP160N075T ID25 = 160 A Power MOSFET RDS(on) 6.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V G VGSM Transient 20 V S D (TAB) ID25 TC = 25 C 16... See More ⇒

 5.2. Size:204K  ixys
 ixta160n04t2 ixtp160n04t2.pdf pdf_icon

IXTP160N085T

Preliminary Technical Information IXTA160N04T2 VDSS = 40V TrenchT2TM IXTP160N04T2 ID25 = 160A Power MOSFET RDS(on) 5m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C40 V S VDGR TJ = 25 C to 175 C, RGS = 1M 40 V (TAB) VGSM Transient 20 V TO-220 (IXTP) ID25 TC ... See More ⇒

 6.1. Size:174K  ixys
 ixta160n10t ixtp160n10t.pdf pdf_icon

IXTP160N085T

Preliminary Technical Information IXTA160N10T VDSS = 100 V TrenchMVTM IXTP160N10T ID25 = 160 A Power MOSFET RDS(on) 7.0 m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 175 C 100 V TO-220 (IXTP) VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGSM Transient 30 V ... See More ⇒

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Detailed specifications: IXTP2N95A, IXTP2N95, IXTP2N65X2, IXTP2N100A, IXTP270N04T4, IXTP20N65XM, IXTP20N65X, IXTP180N055T, IRFP260, IXTP12N65X2, IXTN210P10T, IXTN120P20T, IXTN102N65X2, IXTM7N50A, IXTM7N50, IXTM7N45A, IXTM7N45

Keywords - IXTP160N085T MOSFET specs

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