All MOSFET. IXTP160N085T Datasheet

 

IXTP160N085T Datasheet and Replacement


   Type Designator: IXTP160N085T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 360 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 927 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO-220
 

 IXTP160N085T substitution

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IXTP160N085T Datasheet (PDF)

 ..1. Size:133K  ixys
 ixtp160n085t.pdf pdf_icon

IXTP160N085T

Advance Technical InformationIXTQ 160N085T VDSS = 85 VTrench GateIXTA 160N085T ID25 = 160 APower MOSFETIXTP 160N085T RDS(on) = 6.0 mN-Channel Enhancement ModeTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C85 VGVDGR TJ = 25C to 175C; RGS = 1 M 85 VD(TAB)SVGSM 20 VTO-220 (IXTP)ID25 TC = 25C 160 AIDRM

 5.1. Size:174K  ixys
 ixta160n075t ixtp160n075t.pdf pdf_icon

IXTP160N085T

Preliminary Technical InformationIXTA160N075T VDSS = 75 VTrenchMVTMIXTP160N075T ID25 = 160 APower MOSFET RDS(on) 6.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-263 (IXTA)VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VGVGSM Transient 20 V S D (TAB)ID25 TC = 25C 16

 5.2. Size:204K  ixys
 ixta160n04t2 ixtp160n04t2.pdf pdf_icon

IXTP160N085T

Preliminary Technical InformationIXTA160N04T2 VDSS = 40VTrenchT2TMIXTP160N04T2 ID25 = 160APower MOSFET RDS(on) 5m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C40 VSVDGR TJ = 25C to 175C, RGS = 1M 40 V(TAB)VGSM Transient 20 VTO-220 (IXTP)ID25 TC

 6.1. Size:174K  ixys
 ixta160n10t ixtp160n10t.pdf pdf_icon

IXTP160N085T

Preliminary Technical InformationIXTA160N10T VDSS = 100 VTrenchMVTMIXTP160N10T ID25 = 160 APower MOSFET RDS(on) 7.0 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 175C 100 VTO-220 (IXTP)VDGR TJ = 25C to 175C; RGS = 1 M 100 VVGSM Transient 30 V

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Datasheet: IXTP2N95A , IXTP2N95 , IXTP2N65X2 , IXTP2N100A , IXTP270N04T4 , IXTP20N65XM , IXTP20N65X , IXTP180N055T , IRFP260 , IXTP12N65X2 , IXTN210P10T , IXTN120P20T , IXTN102N65X2 , IXTM7N50A , IXTM7N50 , IXTM7N45A , IXTM7N45 .

History: IXTM15N60 | IXTM4N95A

Keywords - IXTP160N085T MOSFET datasheet

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