All MOSFET. IXTM4N50 Datasheet

 

IXTM4N50 Datasheet and Replacement


   Type Designator: IXTM4N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO3
 

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IXTM4N50 Datasheet (PDF)

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IXTM4N50

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IXTM4N50

 8.2. Size:64K  ixys
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IXTM4N50

 9.1. Size:107K  ixys
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IXTM4N50

VDSS ID25 RDS(on)MegaMOSTMFET IXTH 35N30 300 V 35 A 0.10 IXTH 40N30 300 V 40 A 0.085 IXTM 40N30 300 V 40 A 0.088 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 M 300 VVGS Continuous 20 V D (TAB)VGSM Tra

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Datasheet: IXTM6N60 , IXTM4N95A , IXTM4N95 , IXTM4N90A , IXTM4N90 , IXTM4N80A , IXTM4N80 , IXTM4N50A , IRFZ24N , IXTM4N45A , IXTM4N45 , IXTM4N100A , IXTM4N100 , IXTM3N90A , IXTM3N90 , IXTM3N80A , IXTM3N80 .

History: UTT25P10L-TF3-T | SVS7N60DD2TR | 2SK2328 | P3606BEA | DHE8290 | AM4401P | UPA1913

Keywords - IXTM4N50 MOSFET datasheet

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