All MOSFET. IXTM4N100 Datasheet

 

IXTM4N100 Datasheet and Replacement


   Type Designator: IXTM4N100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: TO3
 

 IXTM4N100 substitution

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IXTM4N100 Datasheet (PDF)

 ..1. Size:66K  ixys
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IXTM4N100

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IXTM4N100

 8.2. Size:64K  ixys
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IXTM4N100

 9.1. Size:107K  ixys
 ixth35n30 ixth40n30 ixtm40n30.pdf pdf_icon

IXTM4N100

VDSS ID25 RDS(on)MegaMOSTMFET IXTH 35N30 300 V 35 A 0.10 IXTH 40N30 300 V 40 A 0.085 IXTM 40N30 300 V 40 A 0.088 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 M 300 VVGS Continuous 20 V D (TAB)VGSM Tra

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Datasheet: IXTM4N90 , IXTM4N80A , IXTM4N80 , IXTM4N50A , IXTM4N50 , IXTM4N45A , IXTM4N45 , IXTM4N100A , STF13NM60N , IXTM3N90A , IXTM3N90 , IXTM3N80A , IXTM3N80 , IXTM2N95A , IXTM2N95 , IXTM2N100A , IXTM2N100 .

History: IRF6662 | CEF740G | SSF2356G8 | SSF2610E | CEP04N7G | TPCA8027-H | TJ15S06M3L

Keywords - IXTM4N100 MOSFET datasheet

 IXTM4N100 cross reference
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