IXTM3N90A Specs and Replacement

Type Designator: IXTM3N90A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.6 Ohm

Package: TO3

IXTM3N90A substitution

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IXTM3N90A datasheet

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IXTM3N90A

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IXTM3N90A

VDSS ID25 RDS(on) IXTH/IXTM 35 N30 300 V 35 A 0.10 MegaMOSTMFET IXTH 40 N30 300 V 40 A 0.085 IXTM 40 N30 300 V 40 A 0.088 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuous 20 V VGSM Tra... See More ⇒

Detailed specifications: IXTM4N80A, IXTM4N80, IXTM4N50A, IXTM4N50, IXTM4N45A, IXTM4N45, IXTM4N100A, IXTM4N100, IRF1407, IXTM3N90, IXTM3N80A, IXTM3N80, IXTM2N95A, IXTM2N95, IXTM2N100A, IXTM2N100, IXTM15N50A

Keywords - IXTM3N90A MOSFET specs

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