All MOSFET. IXTM3N80 Datasheet

 

IXTM3N80 Datasheet and Replacement


   Type Designator: IXTM3N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: TO3
 

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IXTM3N80 Datasheet (PDF)

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IXTM3N80

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IXTM3N80

VDSS ID25 RDS(on) IXTH/IXTM 35 N30 300 V 35 A 0.10 MegaMOSTMFETIXTH 40 N30 300 V 40 A 0.085 IXTM 40 N30 300 V 40 A 0.088 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 M 300 VVGS Continuous 20 VVGSM Tra

Datasheet: IXTM4N50 , IXTM4N45A , IXTM4N45 , IXTM4N100A , IXTM4N100 , IXTM3N90A , IXTM3N90 , IXTM3N80A , 13N50 , IXTM2N95A , IXTM2N95 , IXTM2N100A , IXTM2N100 , IXTM15N50A , IXTM15N45A , IXTM12N50 , IXTM12N45A .

History: VBNC1303 | BSC0996NS | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | P2003EVT | SIHFDC20

Keywords - IXTM3N80 MOSFET datasheet

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