IXTM10N60A Specs and Replacement

Type Designator: IXTM10N60A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: TO3

IXTM10N60A substitution

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IXTM10N60A datasheet

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IXTM10N60A

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IXTM10N60A

VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 10N... See More ⇒

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IXTM10N60A

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IXTM10N60A

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Detailed specifications: IXTM2N95, IXTM2N100A, IXTM2N100, IXTM15N50A, IXTM15N45A, IXTM12N50, IXTM12N45A, IXTM12N45, 2N60, IXTM10N60, IXTL2X240N055T, IXTL2X220N075T, IXTL2X200N085T, IXTL2X180N10T, IXTL2N450, IXTK210P10T, IXTK20N150

Keywords - IXTM10N60A MOSFET specs

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