All MOSFET. IXTM10N60A Datasheet

 

IXTM10N60A Datasheet and Replacement


   Type Designator: IXTM10N60A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO3
 

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IXTM10N60A Datasheet (PDF)

 ..1. Size:64K  ixys
 ixth10n60 ixth10n60a ixtm10n60 ixtm10n60a.pdf pdf_icon

IXTM10N60A

 7.1. Size:105K  ixys
 ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf pdf_icon

IXTM10N60A

VDSS ID25 RDS(on)MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 10N

 7.2. Size:299K  ixys
 ixth10n90 ixtm10n90 ixth12n90 ixtm12n90.pdf pdf_icon

IXTM10N60A

 9.1. Size:316K  ixys
 ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf pdf_icon

IXTM10N60A

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Datasheet: IXTM2N95 , IXTM2N100A , IXTM2N100 , IXTM15N50A , IXTM15N45A , IXTM12N50 , IXTM12N45A , IXTM12N45 , IRF830 , IXTM10N60 , IXTL2X240N055T , IXTL2X220N075T , IXTL2X200N085T , IXTL2X180N10T , IXTL2N450 , IXTK210P10T , IXTK20N150 .

History: NP82N055KLE | SWP078R08ET

Keywords - IXTM10N60A MOSFET datasheet

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