IXTM10N60 MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTM10N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 120 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 270 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: TO3
IXTM10N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTM10N60 Datasheet (PDF)
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