All MOSFET. IXTM10N60 Datasheet

 

IXTM10N60 Datasheet and Replacement


   Type Designator: IXTM10N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: TO3
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IXTM10N60 Datasheet (PDF)

 ..1. Size:64K  ixys
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IXTM10N60

 7.1. Size:105K  ixys
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IXTM10N60

VDSS ID25 RDS(on)MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 10N

 7.2. Size:299K  ixys
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IXTM10N60

 9.1. Size:316K  ixys
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IXTM10N60

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History: RF1S40N10 | IRFB3004GPBF | BRCS200P03DP | TMD830Z | G68 | TSM4424CS | LKK47-06C5

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