IXTM10N60 Datasheet and Replacement
Type Designator: IXTM10N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 120 nC
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 270 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: TO3
IXTM10N60 substitution
IXTM10N60 Datasheet (PDF)
ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf
VDSS ID25 RDS(on)MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 10N
ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf
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Datasheet: IXTM2N100A , IXTM2N100 , IXTM15N50A , IXTM15N45A , IXTM12N50 , IXTM12N45A , IXTM12N45 , IXTM10N60A , 8N60 , IXTL2X240N055T , IXTL2X220N075T , IXTL2X200N085T , IXTL2X180N10T , IXTL2N450 , IXTK210P10T , IXTK20N150 , IXTK120P20T .
History: IXTM4N95A
Keywords - IXTM10N60 MOSFET datasheet
IXTM10N60 cross reference
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IXTM10N60 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IXTM4N95A
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