All MOSFET. IXTL2X240N055T Datasheet

 

IXTL2X240N055T Datasheet and Replacement


   Type Designator: IXTL2X240N055T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 140 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 1240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm
   Package: I5-PAK
 

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IXTL2X240N055T Datasheet (PDF)

 ..1. Size:66K  ixys
ixtl2x240n055t.pdf pdf_icon

IXTL2X240N055T

Advance Technical InformationIXTL2x240N055T VDSS =55 VTrenchMVTMID25 = 2x140 APower MOSFETs RDS(on) 4.4 m Common-Gate PairDD(Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche Rated RG RGISOPLUS i5-PakTM (IXTL)S G SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C; RG

 7.1. Size:66K  ixys
ixtl2x220n075t.pdf pdf_icon

IXTL2X240N055T

Advance Technical InformationTrenchMVTM IXTL2x220N075T VDSS = 75 VID25 = 2x120 APower MOSFETs RDS(on) 5.5 m Common-Gate PairDD(Electrically Isolated Back Surface)N-Channel Enhancement ModeRG RGAvalanche RatedISOPLUS i5-PakTM (IXTL)S G SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; R

 7.2. Size:66K  ixys
ixtl2x200n085t.pdf pdf_icon

IXTL2X240N055T

Advance Technical InformationTrenchMVTMIXTL2x200N085TVDSS = 85 VID25 = 2x112 APower MOSFETs RDS(on) 6.0 m Common-Gate PairDD(Electrically Isolated Back Surface)N-Channel Enhancement ModeRG RGAvalanche RatedISOPLUS i5-PakTM (IXTL)S G SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C85 VVDGR TJ = 25C to 175C;

 8.1. Size:66K  ixys
ixtl2x180n10t.pdf pdf_icon

IXTL2X240N055T

Advance Technical InformationTrenchMVTMIXTL2x180N10TVDSS = 100 VID25 = 2x100 APower MOSFETs RDS(on) 7.4 m Common-Gate PairDD(Electrically Isolated Back Surface)N-Channel Enhancement ModeRG RGISOPLUS i5-PakTM (IXTL)Avalanche RatedS G SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175

Datasheet: IXTM2N100 , IXTM15N50A , IXTM15N45A , IXTM12N50 , IXTM12N45A , IXTM12N45 , IXTM10N60A , IXTM10N60 , AO3401 , IXTL2X220N075T , IXTL2X200N085T , IXTL2X180N10T , IXTL2N450 , IXTK210P10T , IXTK20N150 , IXTK120P20T , IXTK120N65X2 .

History: HGP480N15M | HGS220N10SL | AP3A010MT | SM7302ESKP | RJK1055DPB | ELM5H1072A | CHM8206JGP

Keywords - IXTL2X240N055T MOSFET datasheet

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