All MOSFET. IXTL2X200N085T Datasheet

 

IXTL2X200N085T Datasheet and Replacement


   Type Designator: IXTL2X200N085T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 112 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 1040 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: I5-PAK
 

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IXTL2X200N085T Datasheet (PDF)

 ..1. Size:66K  ixys
 ixtl2x200n085t.pdf pdf_icon

IXTL2X200N085T

Advance Technical InformationTrenchMVTMIXTL2x200N085TVDSS = 85 VID25 = 2x112 APower MOSFETs RDS(on) 6.0 m Common-Gate PairDD(Electrically Isolated Back Surface)N-Channel Enhancement ModeRG RGAvalanche RatedISOPLUS i5-PakTM (IXTL)S G SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C85 VVDGR TJ = 25C to 175C;

 7.1. Size:66K  ixys
 ixtl2x240n055t.pdf pdf_icon

IXTL2X200N085T

Advance Technical InformationIXTL2x240N055T VDSS =55 VTrenchMVTMID25 = 2x140 APower MOSFETs RDS(on) 4.4 m Common-Gate PairDD(Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche Rated RG RGISOPLUS i5-PakTM (IXTL)S G SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C; RG

 7.2. Size:66K  ixys
 ixtl2x220n075t.pdf pdf_icon

IXTL2X200N085T

Advance Technical InformationTrenchMVTM IXTL2x220N075T VDSS = 75 VID25 = 2x120 APower MOSFETs RDS(on) 5.5 m Common-Gate PairDD(Electrically Isolated Back Surface)N-Channel Enhancement ModeRG RGAvalanche RatedISOPLUS i5-PakTM (IXTL)S G SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; R

 8.1. Size:66K  ixys
 ixtl2x180n10t.pdf pdf_icon

IXTL2X200N085T

Advance Technical InformationTrenchMVTMIXTL2x180N10TVDSS = 100 VID25 = 2x100 APower MOSFETs RDS(on) 7.4 m Common-Gate PairDD(Electrically Isolated Back Surface)N-Channel Enhancement ModeRG RGISOPLUS i5-PakTM (IXTL)Avalanche RatedS G SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175

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Datasheet: IXTM15N45A , IXTM12N50 , IXTM12N45A , IXTM12N45 , IXTM10N60A , IXTM10N60 , IXTL2X240N055T , IXTL2X220N075T , RU6888R , IXTL2X180N10T , IXTL2N450 , IXTK210P10T , IXTK20N150 , IXTK120P20T , IXTK120N65X2 , IXTK102N65X2 , IXTJ6N150 .

History: AP0904GH | SM2301 | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | SIHFDC20 | P2003EVT

Keywords - IXTL2X200N085T MOSFET datasheet

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