All MOSFET. IXTJ3N150 Datasheet

 

IXTJ3N150 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXTJ3N150
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 2.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 38.6 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: TO-247

 IXTJ3N150 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXTJ3N150 Datasheet (PDF)

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 ixtj3n150.pdf

IXTJ3N150 IXTJ3N150

Advance Technical InformationHigh Voltage VDSS = 1500VIXTJ3N150ID25 = 2.3APower MOSFET RDS(on) 8.0 (Electrically Isolated Tab)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeISO TO-247TME153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1500 VVDGR TJ = 25C to 150C, RGS = 1M 1500 VG

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HM2301F | AP65SL600DH

 

 
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