All MOSFET. IXTJ3N150 Datasheet

 

IXTJ3N150 Datasheet and Replacement


   Type Designator: IXTJ3N150
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: TO-247
 

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IXTJ3N150 Datasheet (PDF)

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IXTJ3N150

Advance Technical InformationHigh Voltage VDSS = 1500VIXTJ3N150ID25 = 2.3APower MOSFET RDS(on) 8.0 (Electrically Isolated Tab)N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeISO TO-247TME153432Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1500 VVDGR TJ = 25C to 150C, RGS = 1M 1500 VG

Datasheet: IXTL2N450 , IXTK210P10T , IXTK20N150 , IXTK120P20T , IXTK120N65X2 , IXTK102N65X2 , IXTJ6N150 , IXTJ4N150 , 8N60 , IXTI76N25T , IXTI12N50P , IXTI10N60P , IXTH80N65X2 , IXTH80N075L2 , IXTH64N65X , IXTH64N10L2 , IXTH62N65X2 .

History: VBZE04N03 | AUIRFP4227

Keywords - IXTJ3N150 MOSFET datasheet

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