IXTJ3N150 Specs and Replacement

Type Designator: IXTJ3N150

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: TO-247

IXTJ3N150 substitution

- MOSFET ⓘ Cross-Reference Search

 

IXTJ3N150 datasheet

 ..1. Size:113K  ixys
 ixtj3n150.pdf pdf_icon

IXTJ3N150

Advance Technical Information High Voltage VDSS = 1500V IXTJ3N150 ID25 = 2.3A Power MOSFET RDS(on) 8.0 (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1500 V VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V G... See More ⇒

Detailed specifications: IXTL2N450, IXTK210P10T, IXTK20N150, IXTK120P20T, IXTK120N65X2, IXTK102N65X2, IXTJ6N150, IXTJ4N150, IRFB7545, IXTI76N25T, IXTI12N50P, IXTI10N60P, IXTH80N65X2, IXTH80N075L2, IXTH64N65X, IXTH64N10L2, IXTH62N65X2

Keywords - IXTJ3N150 MOSFET specs

 IXTJ3N150 cross reference

 IXTJ3N150 equivalent finder

 IXTJ3N150 pdf lookup

 IXTJ3N150 substitution

 IXTJ3N150 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.