IXTI12N50P MOSFET. Datasheet pdf. Equivalent
Type Designator: IXTI12N50P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 29 nC
trⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 182 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO-263
IXTI12N50P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXTI12N50P Datasheet (PDF)
ixti12n50p.pdf
VDSS = 500VPolarTM Power MOSFET IXTA12N50PID25 = 12AIXTI12N50P RDS(on) 500m IXTP12N50PN-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 500 VS(TAB)VDGR TJ = 25C to 150C, RGS = 1M 500 VVGSS Continuous 30 VVGSM Transient 40 V Leaded TO-263 (IXTI)ID25
ixti10n60p.pdf
IXTA 10N60P VDSS = 600 VPolarHVTMIXTI 10N60P ID25 = 10 APower MOSFETIXTP 10N60P RDS(on) 740 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C 600 VVDGR TJ = 25 C to 175 C; RGS = 1 M 600 VGVGS Continuous Transient 30 VS(TAB)ID25 TC = 25 C10 A
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
