IXTI10N60P Specs and Replacement

Type Designator: IXTI10N60P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.74 Ohm

Package: TO-263

IXTI10N60P substitution

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IXTI10N60P datasheet

 ..1. Size:239K  ixys
 ixti10n60p.pdf pdf_icon

IXTI10N60P

IXTA 10N60P VDSS = 600 V PolarHVTM IXTI 10N60P ID25 = 10 A Power MOSFET IXTP 10N60P RDS(on) 740 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C 600 V VDGR TJ = 25 C to 175 C; RGS = 1 M 600 V G VGS Continuous Transient 30 V S (TAB) ID25 TC = 25 C10 A ... See More ⇒

 9.1. Size:157K  ixys
 ixti12n50p.pdf pdf_icon

IXTI10N60P

VDSS = 500V PolarTM Power MOSFET IXTA12N50P ID25 = 12A IXTI12N50P RDS(on) 500m IXTP12N50P N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 500 V S (TAB) VDGR TJ = 25 C to 150 C, RGS = 1M 500 V VGSS Continuous 30 V VGSM Transient 40 V Leaded TO-263 (IXTI) ID25... See More ⇒

Detailed specifications: IXTK120P20T, IXTK120N65X2, IXTK102N65X2, IXTJ6N150, IXTJ4N150, IXTJ3N150, IXTI76N25T, IXTI12N50P, EMB04N03H, IXTH80N65X2, IXTH80N075L2, IXTH64N65X, IXTH64N10L2, IXTH62N65X2, IXTH52N65X, IXTH4N100L, IXTH48N65X2

Keywords - IXTI10N60P MOSFET specs

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