All MOSFET. IXTI10N60P Datasheet

 

IXTI10N60P Datasheet and Replacement


   Type Designator: IXTI10N60P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.74 Ohm
   Package: TO-263
 

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IXTI10N60P Datasheet (PDF)

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IXTI10N60P

IXTA 10N60P VDSS = 600 VPolarHVTMIXTI 10N60P ID25 = 10 APower MOSFETIXTP 10N60P RDS(on) 740 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C 600 VVDGR TJ = 25 C to 175 C; RGS = 1 M 600 VGVGS Continuous Transient 30 VS(TAB)ID25 TC = 25 C10 A

 9.1. Size:157K  ixys
 ixti12n50p.pdf pdf_icon

IXTI10N60P

VDSS = 500VPolarTM Power MOSFET IXTA12N50PID25 = 12AIXTI12N50P RDS(on) 500m IXTP12N50PN-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 500 VS(TAB)VDGR TJ = 25C to 150C, RGS = 1M 500 VVGSS Continuous 30 VVGSM Transient 40 V Leaded TO-263 (IXTI)ID25

Datasheet: IXTK120P20T , IXTK120N65X2 , IXTK102N65X2 , IXTJ6N150 , IXTJ4N150 , IXTJ3N150 , IXTI76N25T , IXTI12N50P , 2SK3918 , IXTH80N65X2 , IXTH80N075L2 , IXTH64N65X , IXTH64N10L2 , IXTH62N65X2 , IXTH52N65X , IXTH4N100L , IXTH48N65X2 .

History: TSM2318CX | FQD7N20TM | 7N60L-A-TF3 | 5N65L-TF3T-T | AO8808A | HAT2188WP | SLP5N65S

Keywords - IXTI10N60P MOSFET datasheet

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