All MOSFET. IXTH52N65X Datasheet

 

IXTH52N65X Datasheet and Replacement


   Type Designator: IXTH52N65X
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 660 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 52 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 57 nS
   Cossⓘ - Output Capacitance: 3300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
   Package: TO-247
 

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IXTH52N65X Datasheet (PDF)

 ..1. Size:151K  ixys
ixth52n65x.pdf pdf_icon

IXTH52N65X

X-Class VDSS = 650VIXTH52N65XPower MOSFET ID25 = 52A RDS(on) 68m N-Channel Enhancement ModeTO-247 (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VGD TabVGSS Continuous 30 VSVGSM Transient 40 VG = Gate D = DrainID25 TC = 25C52 AS = Source

 8.1. Size:186K  ixys
ixta52p10p ixtp52p10p ixtq52p10p ixth52p10p.pdf pdf_icon

IXTH52N65X

PolarPTM VDSS = - 100VIXTA52P10PID25 = - 52APower MOSFETsIXTP52P10P RDS(on) 50m IXTQ52P10PP-Channel Enhancement ModeAvalanche RatedIXTH52P10PTO-3P (IXTQ)TO-263 AA (IXTA) TO-220AB (IXTP)DGGGSDG SSD (Tab)D D (Tab)S TabSymbol Test Conditions Maximum Ratings TO-247 (IXTH)VDSS TJ = 25C to 150C -100 VVDGR TJ = 2

 8.2. Size:258K  inchange semiconductor
ixth52p10p.pdf pdf_icon

IXTH52N65X

Isc P-Channel MOSFET Transistor IXTH52P10PFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor contorlDC-DC conventersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 9.1. Size:187K  ixys
ixth500n04t2 ixtt500n04t2.pdf pdf_icon

IXTH52N65X

Advance Technical InformationTrenchT2TM VDSS = 40VIXTH500N04T2ID25 = 500APower MOSFETIXTT500N04T2 RDS(on) 1.6m N-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Fast Intrinsic DiodeGDD (Tab)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C40 VVDGR TJ = 25C to 175C, RGS = 1M 40 VTO-268 (IXTT)VGSM T

Datasheet: IXTI76N25T , IXTI12N50P , IXTI10N60P , IXTH80N65X2 , IXTH80N075L2 , IXTH64N65X , IXTH64N10L2 , IXTH62N65X2 , 5N50 , IXTH4N100L , IXTH48N65X2 , IXTH48N15 , IXTH3N200P3HV , IXTH34N65X2 , IXTH32N65X , IXTH2N300P3HV , IXTH2N170D2 .

History: UPA1913 | AOD538 | CSR24N15D

Keywords - IXTH52N65X MOSFET datasheet

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