IXTH48N65X2 Specs and Replacement

Type Designator: IXTH48N65X2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 660 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 48 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 2920 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm

Package: TO-247

IXTH48N65X2 substitution

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IXTH48N65X2 datasheet

 ..1. Size:113K  ixys
 ixth48n65x2.pdf pdf_icon

IXTH48N65X2

Advance Technical Information X2-Class VDSS = 650V IXTH48N65X2 Power MOSFET ID25 = 48A RDS(on) 68m N-Channel Enhancement Mode Avalanche Rated TO-247 G D Symbol Test Conditions Maximum Ratings S D (Tab) VDSS TJ = 25 C to 150 C 650 V G = Gate D = Drain VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S = Source Tab = Drain VGSS Continu... See More ⇒

 7.1. Size:114K  ixys
 ixth48n15.pdf pdf_icon

IXTH48N65X2

Advance Technical Information IXTH 48N15 VDSS = 150 V High Current IXTT 48N15 ID25 = 48 A Power MOSFET RDS(on) = 32 m N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 150 V VDGR TJ = 25 C to 150 C; RGS = 1 M 150 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25 TC = 25 C48 A IDM TC = ... See More ⇒

 9.1. Size:107K  ixys
 ixth35n30 ixth40n30 ixtm40n30.pdf pdf_icon

IXTH48N65X2

VDSS ID25 RDS(on) MegaMOSTMFET IXTH 35N30 300 V 35 A 0.10 IXTH 40N30 300 V 40 A 0.085 IXTM 40N30 300 V 40 A 0.088 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuous 20 V D (TAB) VGSM Tra... See More ⇒

 9.2. Size:187K  ixys
 ixth440n055t2 tt440n055t2.pdf pdf_icon

IXTH48N65X2

Advance Technical Information TrenchT2TM VDSS = 55V IXTH440N055T2 ID25 = 440A Power MOSFET IXTT440N055T2 RDS(on) 1.8m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C, RGS = 1M 55 V VGSS Continuous ... See More ⇒

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Detailed specifications: IXTI10N60P, IXTH80N65X2, IXTH80N075L2, IXTH64N65X, IXTH64N10L2, IXTH62N65X2, IXTH52N65X, IXTH4N100L, IRF730, IXTH48N15, IXTH3N200P3HV, IXTH34N65X2, IXTH32N65X, IXTH2N300P3HV, IXTH2N170D2, IXTH2N150L, IXTH2N150

Keywords - IXTH48N65X2 MOSFET specs

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