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IXTH48N65X2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IXTH48N65X2

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 660 W

Предельно допустимое напряжение сток-исток |Uds|: 650 V

Предельно допустимое напряжение затвор-исток |Ugs|: 30 V

Пороговое напряжение включения |Ugs(th)|: 4.5 V

Максимально допустимый постоянный ток стока |Id|: 48 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 16 ns

Выходная емкость (Cd): 2920 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.068 Ohm

Тип корпуса: TO-247

Аналог (замена) для IXTH48N65X2

 

 

IXTH48N65X2 Datasheet (PDF)

0.1. ixth48n65x2.pdf Size:113K _ixys

IXTH48N65X2
IXTH48N65X2

Advance Technical InformationX2-Class VDSS = 650VIXTH48N65X2Power MOSFET ID25 = 48A RDS(on) 68m N-Channel Enhancement ModeAvalanche RatedTO-247GDSymbol Test Conditions Maximum RatingsSD (Tab)VDSS TJ = 25C to 150C 650 VG = Gate D = DrainVDGR TJ = 25C to 150C, RGS = 1M 650 VS = Source Tab = DrainVGSS Continu

7.1. ixth48n15.pdf Size:114K _ixys

IXTH48N65X2
IXTH48N65X2

Advance Technical InformationIXTH 48N15 VDSS = 150 VHigh CurrentIXTT 48N15 ID25 = 48 APower MOSFET RDS(on) = 32 mN-Channel Enhancement ModeTO-247 AD (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 150 VVDGR TJ = 25C to 150C; RGS = 1 M 150 VVGS Continuous 20 V(TAB)VGSM Transient 30 VID25 TC = 25C48 AIDM TC =

 9.1. ixth4n100l.pdf Size:111K _ixys

IXTH48N65X2
IXTH48N65X2

Advance Technical InformationLinearTM Power MOSFET VDSS = 1000VIXTH4N100LID25 = 4Aw/Extended FBSOA RDS(on) 2.8 N-Channel Enhancement ModeGuaranteed FBSOAAvalanche RatedTO-247GD (Tab)SSymbol Test Conditions Maximum RatingsG = Gate D = DrainVDSS TJ = 25C to 150C 1000 V S = Source Tab = DrainVDGR TJ = 25C to 150

9.2. ixth35n30 ixth40n30 ixtm40n30.pdf Size:107K _ixys

IXTH48N65X2
IXTH48N65X2

VDSS ID25 RDS(on)MegaMOSTMFET IXTH 35N30 300 V 35 A 0.10 IXTH 40N30 300 V 40 A 0.085 IXTM 40N30 300 V 40 A 0.088 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 M 300 VVGS Continuous 20 V D (TAB)VGSM Tra

 9.3. ixth35n30 ixtm35n30 ixth40n30 ixtm40n30.pdf Size:55K _ixys

IXTH48N65X2
IXTH48N65X2

VDSS ID25 RDS(on) IXTH/IXTM 35 N30 300 V 35 A 0.10 MegaMOSTMFETIXTH 40 N30 300 V 40 A 0.085 IXTM 40 N30 300 V 40 A 0.088 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C; RGS = 1 M 300 VVGS Continuous 20 VVGSM Tra

9.4. ixth440n055t2 tt440n055t2.pdf Size:187K _ixys

IXTH48N65X2
IXTH48N65X2

Advance Technical InformationTrenchT2TM VDSS = 55VIXTH440N055T2ID25 = 440APower MOSFETIXTT440N055T2 RDS(on) 1.8m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247 (IXTH)GSymbol Test Conditions Maximum RatingsDD (Tab)SVDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C, RGS = 1M 55 VVGSS Continuous

 9.5. ixth42n20 ixtm42n20 ixth50n20 ixtm50n20.pdf Size:378K _ixys

IXTH48N65X2
IXTH48N65X2

Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine

9.6. ixta460p2-ixtp460p2-ixtq460p2-ixth460p2.pdf Size:154K _ixys

IXTH48N65X2
IXTH48N65X2

PolarP2TM VDSS = 500VIXTA460P2ID25 = 24APower MOSFETIXTP460P2 RDS(on) 270m IXTQ460P2N-Channel Enhancement Modetrr(typ) = 400nsAvalanche Rated IXTH460P2Fast Intrinsic DiodeTO-220AB (IXTP)TO-263 AA (IXTA)TO-3P (IXTQ)GGS DGD SD (Tab)D (Tab) SD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V

9.7. ixtp450p2 ixth450p2 ixtq450p2.pdf Size:111K _ixys

IXTH48N65X2
IXTH48N65X2

Advance Technical InformationPolarP2TM VDSS = 500VIXTP450P2ID25 = 16APower MOSFETIXTQ450P2 RDS(on) 330m IXTH450P2trr(typ) = 400nsN-Channel Enhancement ModeAvalanche RatedTO-220AB (IXTP)Fast Intrinsic DiodeGDTabSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VTO-3P (IXTQ)VDGR TJ = 25C to 150C, RG

9.8. ixth40n50l2.pdf Size:211K _inchange_semiconductor

IXTH48N65X2
IXTH48N65X2

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXTH40N50L2FEATURESWith TO-247 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

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