IXTH20N65X Specs and Replacement

Type Designator: IXTH20N65X

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 320 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 1060 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.21 Ohm

Package: TO-247

IXTH20N65X substitution

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IXTH20N65X datasheet

 ..1. Size:231K  ixys
ixta20n65x ixth20n65x ixtp20n65x.pdf pdf_icon

IXTH20N65X

Preliminary Technical Information X-Class VDSS = 650V IXTA20N65X Power MOSFET ID25 = 20A IXTP20N65X RDS(on) 210m IXTH20N65X N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V VG... See More ⇒

 6.1. Size:316K  ixys
ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf pdf_icon

IXTH20N65X

Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine ... See More ⇒

 6.2. Size:105K  ixys
ixth20n60 ixtm20n60.pdf pdf_icon

IXTH20N65X

IXTH 20N60 VDSS = 600 V MegaMOSTMFET IXTM 20N60 ID25 = 20 A RDS(on) = 0.35 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 15N60 15 A TO-204 AE (IXTM) 20N60 20 A IDM TC = 25 C, p... See More ⇒

 8.1. Size:205K  ixys
ixth200n085t ixtq200n085t.pdf pdf_icon

IXTH20N65X

Preliminary Technical Information IXTH200N085T VDSS = 85 V TrenchMVTM IXTQ200N085T ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V ID25 TC = 25 C 20... See More ⇒

Detailed specifications: IXTH3N200P3HV, IXTH34N65X2, IXTH32N65X, IXTH2N300P3HV, IXTH2N170D2, IXTH2N150L, IXTH2N150, IXTH270N04T4, IRFZ44, IXTH1R8N220P3HV, IXTH1R4N250P3, IXTH1N450HV, IXTH1N300P3HV, IXTH1N200P3HV, IXTH1N200P3, IXTH1N170DHV, IXTH15N70

Keywords - IXTH20N65X MOSFET specs

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