All MOSFET. IXTH1N200P3HV Datasheet

 

IXTH1N200P3HV Datasheet and Replacement


   Type Designator: IXTH1N200P3HV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 2000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 23.5 nC
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 40 Ohm
   Package: TO-247
 

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IXTH1N200P3HV Datasheet (PDF)

 ..1. Size:252K  ixys
 ixta1n200p3hv ixth1n200p3 ixth1n200p3hv.pdf pdf_icon

IXTH1N200P3HV

Preliminary Technical InformationHigh Voltage VDSS = 2000VIXTA1N200P3HVPower MOSFETID25 = 1.0AIXTH1N200P3HV RDS(on) 40 IXTH1N200P3N-Channel Enhancement ModeTO-263HV (IXTA)GS D (Tab)Symbol Test Conditions Maximum RatingsTO-247HV (IXTH)VDSS TJ = 25C to 150C 2000 VVDGR TJ = 25C to 150C, RGS = 1M

 8.1. Size:206K  ixys
 ixth1n450hv.pdf pdf_icon

IXTH1N200P3HV

High Voltage VDSS = 4500VIXTT1N450HVPower MOSFETID25 = 1AIXTH1N450HV RDS(on) 80 N-Channel Enhancement ModeTO-268HV (IXTT)GS D (Tab)Symbol Test Conditions Maximum RatingsTO-247HV (IXTH)VDSS TJ = 25C to 150C 4500 VVDGR TJ = 25C to 150C, RGS = 1M 4500 VVGSS Continuous 20 VVGSM Transient 30

 8.2. Size:238K  ixys
 ixta1n170dhv ixth1n170dhv.pdf pdf_icon

IXTH1N200P3HV

Advance Technical InformationDepletion Mode VDSX = 1700VIXTA1N170DHVMOSFET ID(on) > 1AIXTH1N170DHV RDS(on) 16 N-ChannelTO-263HV (IXTA)GS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSX TJ = 25C to 150C 1700 VVDGX TJ = 25C to 150C, RGS = 1M 1700 VVGSX Continuous 20 VVGSM Transient 30 V

 8.3. Size:73K  ixys
 ixth1n100 ixtt1n100.pdf pdf_icon

IXTH1N200P3HV

Advance Technical InformationVDSS = 1000 VIXTH 1N100High Voltage MOSFETID25 = 1.5 AIXTT 1N100 RDS(on) = 11 N-Channel Enhancement ModeAvalanche Energy RatedSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC

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Datasheet: IXTH2N150L , IXTH2N150 , IXTH270N04T4 , IXTH20N65X , IXTH1R8N220P3HV , IXTH1R4N250P3 , IXTH1N450HV , IXTH1N300P3HV , IRF630 , IXTH1N200P3 , IXTH1N170DHV , IXTH15N70 , IXTH15N50A , IXTH15N45A , IXTH140P10T , IXTH12N65X2 , IXTH12N50 .

Keywords - IXTH1N200P3HV MOSFET datasheet

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