IXTH15N45A Datasheet and Replacement
Type Designator: IXTH15N45A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 290 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO-247
IXTH15N45A substitution
IXTH15N45A Datasheet (PDF)
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ixth15n70.pdf
IXTH15N70 PCB24IXTH 15N70 VDSS = 700 VMegaMOSTMFET ID (cont) = 15 ARDS(on) = 0.45 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 700 VVDGR TJ = 25C to 150C; RGS = 1 M 700 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 T
ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf
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Datasheet: IXTH1R4N250P3 , IXTH1N450HV , IXTH1N300P3HV , IXTH1N200P3HV , IXTH1N200P3 , IXTH1N170DHV , IXTH15N70 , IXTH15N50A , IRFB4227 , IXTH140P10T , IXTH12N65X2 , IXTH12N50 , IXTH12N45A , IXTH12N45 , IXTH12N150 , IXTH10N60A , IXTH10N60 .
History: XP161A1355PR-G | DATD063N06N | 2SK2100-01MR
Keywords - IXTH15N45A MOSFET datasheet
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History: XP161A1355PR-G | DATD063N06N | 2SK2100-01MR
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