IXTA180N055T MOSFET PDF: N-Ch, 55V, 180A. Full specification with pinout and replacement list

IXTA180N055T PDF Specs and Replacement

   Type Designator: IXTA180N055T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 360 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 1190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO-263

IXTA180N055T substitution

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IXTA180N055T PDF Specs

..1. Size:108K ixys
ixta180n055t ixtp180n055t ixtq180n055t.pdf pdf_icon

Advance Technical Information IXTQ 180N055T VDSS = 55 V Trench Gate IXTA 180N055T ID25 = 180 A Power MOSFET IXTP 180N055T RDS(on) = 4.0 m N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C55 V G VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V D (TAB) S VGSM 20 V TO-220 (IXTP) ID25 TC = 25 C 180 A IDRM... See More ⇒

5.1. Size:197K ixys
ixta180n085t7.pdf pdf_icon

Preliminary Technical Information VDSS = 85 V IXTA180N085T7 TrenchMVTM ID25 = 180 A Power MOSFET RDS(on) 5.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V 1 ID25 TC = 25 ... See More ⇒

5.2. Size:214K ixys
ixta180n085t ixtp180n085t.pdf pdf_icon

Preliminary Technical Information IXTA180N085T VDSS = 85 V TrenchMVTM IXTP180N085T ID25 = 180 A Power MOSFET RDS(on) 5.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V G VGSM Transient 20 V S (TAB) ID25 T... See More ⇒

6.1. Size:197K ixys
ixta180n10t7.pdf pdf_icon

PreliminaryTechnical Information VDSS = 100 V IXTA180N10T7 TrenchMVTM ID25 = 180 A Power MOSFET RDS(on) 6.4 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGSM Transient 30 V 1 ID25 TC = 25 ... See More ⇒