IXFX90N60X Datasheet. Specs and Replacement

Type Designator: IXFX90N60X

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 6300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm

Package: PLUS247

IXFX90N60X substitution

- MOSFET ⓘ Cross-Reference Search

 

IXFX90N60X datasheet

 ..1. Size:197K  ixys
 ixfk90n60x ixfx90n60x.pdf pdf_icon

IXFX90N60X

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFK90N60X Power MOSFET ID25 = 90A IXFX90N60X RDS(on) 38m N-Channel Enhancement Mode Avalanche Rated TO-264P (IXFK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 600 V D Tab VDGR TJ = 25 C to 150 C, RGS = 1M 600 V S VGSS ... See More ⇒

 7.1. Size:125K  ixys
 ixfx90n30 ixfk90n30.pdf pdf_icon

IXFX90N60X

IXFX 90N30 VDSS = 300 V HiPerFETTM IXFK 90N30 ID25 = 90 A Power MOSFETs RDS(on) = 33 m Single MOSFET Die trr 250 ns Symbol Test Conditions Maximum Ratings PLUS 247TM VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V (TAB) G VGS Continuous 20 V D VGSM Transient 30 V ID25 TC = 25 C (MOSFET chip capabi... See More ⇒

 7.2. Size:52K  ixys
 ixfx90n20q ixfk90n20q.pdf pdf_icon

IXFX90N60X

HiPerFETTM IXFX 90N20Q VDSS = 200 V IXFK 90N20Q ID25 = 90 A Power MOSFETs RDS(on) = 22 m Q-CLASS Single MOSFET Die trr s 200 N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings (TAB) G D VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 ... See More ⇒

 9.1. Size:135K  ixys
 ixfk94n50p2 ixfx94n50p2.pdf pdf_icon

IXFX90N60X

Polar2TM HiPerFETTM VDSS = 500V IXFK94N50P2 Power MOSFET ID25 = 94A IXFX94N50P2 RDS(on) 55m N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode G Symbol Test Conditions Maximum Ratings D S VDSS TJ = 25 C to 150 C 500 V Tab VDGR TJ = 25 C to 150 C, RGS = 1M 500 V VGSS Continuous 30 V PLUS247 (IXFX) VGSM Tr... See More ⇒

SHOW MORE

Detailed specifications: IXTA02N450HV, IXTA02N250HV, IXTA02N250, IXKP35N60C5, IXKG25N80C, IXFY9130, IXFY5N50P3, IXFY4N60P3, IRF1407, IXFX44N55Q, IXFX32N90P, IXFX30N50Q, IXFX260N17T, IXFX24N100Q3, IXFX210N17T, IXFX150N30P3, IXFX12N90Q

Keywords - IXFX90N60X MOSFET specs

 IXFX90N60X cross reference

 IXFX90N60X equivalent finder

 IXFX90N60X pdf lookup

 IXFX90N60X substitution

 IXFX90N60X replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs