IXFX32N90P MOSFET. Datasheet pdf. Equivalent
Type Designator: IXFX32N90P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 960 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 6.5 V
Maximum Drain Current |Id|: 32 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 215 nC
Rise Time (tr): 80 nS
Drain-Source Capacitance (Cd): 750 pF
Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm
Package: PLUS247
IXFX32N90P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IXFX32N90P Datasheet (PDF)
1.1. ixfk32n90p ixfx32n90p.pdf 
Size:124K _ixys
Advance Technical Information PolarTM HiPerFETTM VDSS = 900V IXFK32N90P Power MOSFETs ID25 = 32A IXFX32N90P Ω RDS(on) < 300mΩ Ω Ω Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXFK) Symbol Test Conditions Maximum Ratings G D VDSS TJ = 25°C to 150°C 900 V S VDGR TJ = 25°C to 150°C, RGS = 1MΩ 900 V Tab VGSS Continuous ±30 V VGSM Tr
3.1. ixfk32n80p ixfx32n80p.pdf Size:161K _ixys
IXFK 32N80P VDSS = 800 V PolarHVTM HiPerFET IXFX 32N80P ID25 = 32 A Power MOSFET ? ? RDS(on) ? 270 m? ? ? ? ? ? ? N-Channel Enhancement Mode ? trr ? 250 ns ? ? ? Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 800 V VGSS Continuous 30 V VGSM Transient 40 V G D
3.2. ixfk32n50q ixfx32n50q.pdf Size:573K _ixys
VDSS ID25 RDS(on) IXFK 32N50Q HiPerFETTM IXFX 32N50Q Ω 500 V 32 A 0.16 Ω Ω Ω Power MOSFETs Ω Ω 500 V 32 A 0.16 Ω Ω Ω Ω Q-Class ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .
