IXFX120N30P3 Datasheet. Specs and Replacement

Type Designator: IXFX120N30P3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 1406 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: PLUS247

IXFX120N30P3 substitution

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IXFX120N30P3 datasheet

 ..1. Size:131K  ixys
 ixfk120n30p3 ixfx120n30p3.pdf pdf_icon

IXFX120N30P3

Advance Technical Information Polar3TM HiPerFETTM VDSS = 300V IXFK120N30P3 Power MOSFETs ID25 = 120A IXFX120N30P3 RDS(on) 27m trr 250ns N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode G D Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 300 V Tab VDGR TJ = 25 C to 150 ... See More ⇒

 4.1. Size:139K  ixys
 ixfk120n30t ixfx120n30t.pdf pdf_icon

IXFX120N30P3

Advance Technical Information GigaMOSTM VDSS = 300V IXFK120N30T ID25 = 120A Power MOSFET IXFX120N30T RDS(on) 24m trr 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V G D VDGR TJ = 25 C to 150 C, RGS = 1M ... See More ⇒

 6.1. Size:159K  ixys
 ixfk120n65x2 ixfx120n65x2.pdf pdf_icon

IXFX120N30P3

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFK120N65X2 Power MOSFET ID25 = 120A IXFX120N65X2 RDS(on) 24m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264P (IXFK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 650 V D Tab VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S VGSS... See More ⇒

 6.2. Size:123K  ixys
 ixfk120n25p ixfx120n25p.pdf pdf_icon

IXFX120N30P3

VDSS = 250 V IXFK 120N25P PolarHTTM HiPerFET ID25 = 120 A IXFX 120N25P Power MOSFET RDS(on) 24 m N-Channel Enhancement Mode trr 200 ns Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 250 V TO-264 (IXFK) VDGR TJ = 25 C to 175 C; RGS = 1 M 250 V VGS Continuous... See More ⇒

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Detailed specifications: IXFX32N90P, IXFX30N50Q, IXFX260N17T, IXFX24N100Q3, IXFX210N17T, IXFX150N30P3, IXFX12N90Q, IXFX120N65X2, IRF2807, IXFX100N65X2, IXFT9N80Q, IXFT94N30T, IXFT94N30P3, IXFT70N30Q3, IXFT50N60X, IXFT50N20, IXFT46N30T

Keywords - IXFX120N30P3 MOSFET specs

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