IXFT28N50Q Datasheet. Specs and Replacement

Type Designator: IXFT28N50Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 470 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO-268

IXFT28N50Q substitution

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IXFT28N50Q datasheet

 ..1. Size:121K  ixys
 ixft28n50q.pdf pdf_icon

IXFT28N50Q

Advanced Technical Information IXFH 28N50Q VDSS = 500 V HiPerFETTM IXFT 28N50Q ID25 = 28 A Power MOSFETs RDS(on) = 0.20 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500... See More ⇒

 9.1. Size:158K  ixys
 ixfh21n50 ixfh24n50 ixfh26n50 ixfm21n50 ixfm24n50 ixfm26n50 ixft24n50 ixft26n50.pdf pdf_icon

IXFT28N50Q

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM21N50 500 V 21 A 0.25 Power MOSFETs IXFH/IXFM/IXFT24N50 500 V 24 A 0.23 IXFH/IXFT26N50 500 V 26 A 0.20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to... See More ⇒

 9.2. Size:145K  ixys
 ixfh24n50q ixft24n50q ixfh26n50q ixft26n50q.pdf pdf_icon

IXFT28N50Q

HiPerFETTM VDSS ID25 RDS(on) Power MOSFETs IXFH/IXFT 24N50Q 500 V 24 A 0.23 IXFH/IXFT 26N50Q 500 V 26 A 0.20 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 ... See More ⇒

 9.3. Size:577K  ixys
 ixft23n80q.pdf pdf_icon

IXFT28N50Q

IXFH23N80Q VDSS = 800 V HiPerFETTM IXFT23N80Q ID25 = 23 A Power MOSFETs RDS(on) = 0.42 Q-Class N-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, High dv/dt TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V (TAB) VGS Continuous 30... See More ⇒

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Detailed specifications: IXFT50N60X, IXFT50N20, IXFT46N30T, IXFT44N50Q3, IXFT40N50Q, IXFT30N60X, IXFT30N60Q, IXFT30N50Q, IRF830, IXFT23N80Q, IXFT23N60Q, IXFT18N100Q3, IXFT17N80Q, IXFT150N20T, IXFT12N100QHV, IXFT120N25T, IXFR80N10Q

Keywords - IXFT28N50Q MOSFET specs

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